Study On Structure Design And Performance Of SiC Radiation Detector

For the past decades,the silicon and germanium detector had been widely used in many fields for their good energy linearity,high energy resolution,quick response time and high energy efficiency.As the silicon and germanium are both narrow energy gap semi-conductor,they must be used with cryogenic equipment and their radiation resistance is poor.Recently,much effort have been invested in finding a radiation hard,room temperature semiconductor detector,the composed semiconductor especially the SiC detector have drawn tremendous attention for its moderate energy gap.According to the demand of space application,the design parameters of SiC detector based on the literature research was accomplished in this paper,the simulation analysis and experimental verification for the SiC material to be used as the radiation detector were also carried out.First,the detection efficiency of SiC and other detector materials on different particles is compared.The responses of 30?m Si C and Si to different particles such as 4-10 MeV alpha particles,100keV-1Me V electrons,100keV-9MeV protons and 1-9keV X-rays were compared using the Geant4 software package respectively.The simulation results showed that SiC can replace Si as an alternative material for radiation detectors.In the future,SiC detectors can replace Si detectors for X-ray detection.Then,the simulation analysis of SiC used as a ?E detector basing on the SJ-10 radiation detector design is carried out for space particle identification,that is SiC and cadmium zinc telluride(CZT)were used to construct a "telescope" particle identification and detection system.The simulation results show that different types of particles appear in different regions of the energy spectrum,so they can be identified to prove that the detector system can be used for space particle identification.Finally,the curve of current changing with the voltage and the energy spectrum of fabricated 30 ?m thick SiC detectors were derived.The results were compared with those of mature Si detectors.The comparison of I-V test shows that the leakage current of SiC is much lower than that of Si detector under the same bias voltage.The detection efficiency of the SiC detector showed no differences with the AXUV-100 Si detector of IRD Co.,and the total energy deposition peak of the 5.1MeV and 5.4MeV alpha particles can be well separated.