Preparation And Properties Of Sulfide Semiconductor Quantum Dot Sensitized Solar Cells

With the depletion of oil,coal and natural gas and the increasing pollution of the environment,the state has been advocating new energy sources,such as wind energy,solar energy and electric energy.The solar energy were inexhaustible.There fore,solar cells have get a lot of attention and support.Quantum dot sensitized solar cell,which with the simple process,low cost and high photoelectric conversion efficiency theory,is considered to be great potential for development of new third-generation solar cells.The theory of quantum dot sensitized solar cell photoelectric conversion efficiency is up to 66%based on multiple exciton effect?MEG?,has already exceeded Shockley-Kui Yise limit of 31%.In the thesis,the purchase of TiO₂ slurry as photoanode,different sulfide quantum dots as a sensitizer.the influences of the deposition times and concentration of quantum dots on the quantum dot-sensitized solar cell photovoltaic conversion efficiency was investigated.Finally,getting the optimal deposition times and concentration of quantum dots.The main contents are as follows:?1?We employed the successive ionic layer adsorption and reaction?SILAR?method to fabricate TiO₂/PbS co-sensitized solar cells.When PbS precursor concentration is 0.02mol/L,PbS deposition is 2 times have highest conversion efficiency,short-circuit current density?JSC?.open voltage?Voc?,the fill factor?FF?reach to 3.63 mA/cm2,0.338V.0.408 respectively.The efficiency of solar cell reaches to 0.50%.When PbS precursor concentration is 0.01 mol/L,0.02 mol/L,0.04 mol/L,0.06mol/L respectively.PbS precursor concentration is 0.04mol/L and deposition times is 2 times have highest conversion efficiency.short-circuit current density?Jsc?.open voltage?VOC?.the fill factor?FF?reach to 4.09 mA/cm2,0.350V.0.469 respectively.The efficiency of solar cell reaches to 0.671%.?2?We employed the successive ionic layer adsorption and reaction?SILAR?method to fabricate TiO₂/CdS co-sensitized solar cells.When CdS precursor concentration is 0.025 mol/L,CdS deposition is 9 times have highest conversion efficiency,short-circuit current density?Jsc?.open voltage?Voc?.the fill factor?FF?reach to 4.40mA/cm 2 0.603V,0.482 respectively.The efficiency of solar cell reaches to 1.28%.When CdS precursor concentration is 0.025mol/L,0.05mol/L,0.1mol/L,respectively.CdS precursor concentration is 0.05mol/L and deposition times is 9 times have highest conversion efficiency.short-circuit current density?Jsc?open voltage?Voc?the fill factor?FF?reach to4.49mA/cm2 0.671V.0.481 respectively.The efficiency of solar cell reaches to 1.45%.?3?We employed the successive ionic layer adsorption and reaction?SILAR?method to fabricate TiO₂/PbS/CdS co-sensitized solar cells.When CdS precursor concentration is 0.05 mol/L,PbS depositiontimes and concentration are 2 times and 0.01 mol/L,the influences of the CdS deposition times quantum dot-sensitized solar cell photovoltaic conversion efficiency was investigated.It experimental results show that CdS deposition is 5 times have highest conversion efficiency,short-circuit current density?Jsc?.open voltage?Voc?,the fill factor?FF?reach to 5.87mA/cm2,0.410V,0.549 respectively.The efficiency of solar cell reaches to 0.84%.When PbS precursor concentration is 0.01mol/L,0.02mol/L,0.04mol/L,respectively.CdS precursor concentration is 0.05mol/L and deposition times is 5 times have highest conversion efficiency,short-circuit current density?Jsc?,open voltage?Voc?,the fill factor?FF?reach to 7.13mA/cm2,0.453V,0.348 respectively.The efficiency of solar cell reaches to 1.12%.