Research On The Key Techniques Of CMOS THz Thermal Detector

Terahertz(THz)wave is electromagnetic wave between 0.3 THz to 30 THz,locating between millimeter wave and infrared wavelength.The wave is low-power and strongly penetrating.Its wavelength is close to radiation wavelength of cosmic objects.In recent years,there has been an increasing interest in THz applications like safety monitoring,military examination and universal observation due to its unique characteristics.At present,most THz detectors limited by the semiconductor cut-off frequency can't detect higher terahertz wave band.To overcome the limitation of the THz detector,this paper proposed a new-type thermal THz detector based on the standard CMOS technology.The “metal antenna-resistance-temperature sensing” detector structure was proposed.The detector can cover any band of the terahertz wave.The detector is based on the standard 0.18 ?m CMOS technology,which works at room temperature.Under the guidance of basic theory,we designed "dipole antenna-poly resistance-PTAT temperature sensor" and "cross antenna-poly resistance-NMOS temperature sensor" two types of detector structure.With the help of HFSS,COMSOL and Candence,the physical modeling of the detector including the mechanism of the electromagnetic energy absorption,the thermal conversion,and the electrical circuit response,are presented.According to the simulation,we design the layout of the THz detectors for the tape-out chip.In this paper,we can obtain that the “dipole antenna-poly resistance-PTAT temperature sensor” detector's responsibility is 18.5V/W through the simulation and the equivalent noise power is 1.7 ?W/?Hz.The "Cross-dipole antenna-poly resistance-NMOS temperature sensor” detector's simulated responsibility is 8.6V/W.Its equivalent noise power is.0.12 ?W/?Hz.This article also proposed the test scheme design for the taped-out detector chip.