Fabrication And Properties Of Optical Waveguide Based On Electron Beam Lithography Assisted Electrochemistry

The integrated optical circuit features small volume,high level of integration,and stable performance.Compared to the integrated circuit,the integrated optical circuit has better ability of transmission and processing,and broader development prospect.The optical wave is a common element and its preparation method is of great value.The electron beam lithography is to make patterns based on InP substrate as reticle mask of electrochemical etching porous waveguiding structure.The control variate method is used to research electric current density during electrochemical etching,and effect of mask pattern and etch period on porous structure.The experiment result shows that electric current density can affect surface pore size of porous structure and etching depth;distribution of porous structures can be induced by the mask pattern;the etch period can control the etching depth.Conduct reflectivity measurement for the porous structure acquired by electrochemical etching.The result shows that reflectivity of the porous structure InP is obviously raised when the incident wavelength is greater than 900m;reflectivity of the porous structure InP is increased with increase of angle of incidence;reflectivity of the porous structure InP is increased with increase of average porosity within certain range.Establish the end-face coupling test system to test porous waveguide structure formed by electrochemical etching.The result shows that the guiding mode of porous structure is always single mode output.Conduct insertion loss test for porous waveguiding structure with length of 500?m which is formed by electrochemical etching,and the loss is in the range of 9.91~9.99 dB.