Multi-parameter Process Optimization Of Silicon Wafer Cutting Process Based On Finite Element Analysis

In recent years,solar energy,as an important part of clean energy,has developed rapidly,and countries have further increased their support to accelerate the pace of photovoltaic development.For example,the "Solar pilot Program" sponsored by the American Photovoltaic Association aims to save the capital of solar power generation,and predicts that the scale and business will reach unusually fierce competition between 2015 and 2020;Japan further proposes the total realization of 28 GW for photovoltaic solar power by 2020.The State Council of China has put forward a series of encouraging measures to promote the development of photovoltaic industry,such as the interim measures for the management of financial subsidies for solar photovoltaic buildings and the key projects of the Golden Sun demonstration project.With the continuous development of global science and technology,the demand for green energy is gradually increasing.Therefore,the photovoltaic industry as a new green energy is booming,and wafer cutting as the main process of the photovoltaic industry is becoming more and more important.Based on the above reasons,it is necessary to analyze and optimize the silicon wafer cutting process.In this document,the research on polysilicon cutting is mainly focused on the following aspects:(1)understand the research status of silicon wafer processing technology at home and abroad,analyze the mechanism of silicon wafer processing technology on the basis of previous studies;(2)analyze the important factors that affect the cutting effect of polysilicon wafer and the main reasons that affect the effect of shearing.(3)find out several main factors that affect the multi-wire cutting of silicon wafer.By using the method of experimental design,some unreasonable cutting processes are ignored and some cutting factors that influence each other are unified.(4)the finite element calculation model of multi-wire cutting is designed,and the limitation of the finite element calculation model is analyzed.The parameters of multiple polysilicon wafer multi-wire cutting system are set,and the necessary related parameter groups are analyzed.(5)the definition of multi-wire cutting of silicon wafer and the influence of several factors on the cutting effect are analyzed and verified by experiments.In this thesis,based on the analysis of the principle of silicon wafer cutting,the finite element calculation model of silicon wafer cutting is determined through finite element simulation and data analysis.And set the corresponding load and constraintconditions.Reduce the research cost of enterprise product design experiment,reduce the input of manpower and resources,and reduce tedious processes and repeated experiments.A set of experimental design methods of several wafer cutting processes and the setting of multi-wire cutting process parameters are designed,and the best cutting parameters in this case are obtained.Thus,it provides the theoretical basis and technical support for the wafer cutting technology.