Reaserch On Solid-state Amplification Technology At 220 GHz

Terahertz wave has characteristics of wide bandwidth,strong penetration and low photon energy,which can be applied to the next generation of communication,security and medical detection fields.Because of the potential great value of terahertz,research institutions have carried out relevant research works.Amplifier is an important part of the transceiver front-end in terahertz system,and the performance of the terahertz amplifier determines the performance of the whole terahertz system.Therefore,terahertz solid-state amplifiers have received more and more attention.This paper mainly focuses on solid-state terahertz amplification technology at the"atmospheric window"with a low attenuation frequency of 220 GHz.Main reasearch works include the design of indium phosphide?InP?monolithic amplifier and the relevant packaging technology,and some circuits of the the transceiver front-end in a terahertz communication system are built.In the research of the terahertz power amplifier,an integrated planar spatial?IPS?combiner is designed in this thesis.According to design index and process line,based on a 0.5?m-InP DHBT process,a six-way eight-stage amplifier was designed by using the IPS combiner.Simulation results show that the small-signal gain of the amplifier is over 10 dB at 205-235 GHz,and a 13.1 dBm saturated output power is observed at 220GHz.Then,an amplifier module is achieved by using a domestic low noise amplifier chip.In the process of packaging,we place Compact Microstrip Resonating Cell?CMRC?low-pass filters close to the chip of DC side.The characteristic of good isolation at terahertz frequencies of the CMRC low-pass filter prevents leakage RF signal to the DC side,which improves the performance of the module.Test results show that the small-signal gain of the module at 200-240 GHz is over 10 dB,and the small-signal gain at 203-217 GHz is 16-18 dB,and the P_1dB at 220 GHz is 3.2 dBm.The small-signal gain in the on-chip test in the 210-225 GHz frequency band is 15-20 dB.Comparing the small-signal gain of the module with on-chip results,we find the overall trend is the same,and the single-end package loss of the low noise amplifier is within 2dB.Further,with the successful packaging experience of the low noise amplifier,two domestic 220 GHz power amplifier chips are packaged.Test results show that the maximum saturated output power of the InP HBT power amplifier module is more than4 dBm,and it is the first public reported 220 GHz HBT power amplifier module in China.The InP HEMT power amplifier module achieves a saturation output power of10 dbm at 224 GHz,which is the first 220 GHz power amplifier module with a saturation output power of 10 dbm public reported in China.Finally,a T/R front-end in a 220 GHz terahertz communication system is achieved by combining the amplifier module with other functional units developed by the research group.The terahertz communication system is tested at a range of 7 meters with 16 QAM modulation and seven carrier conversions,and this system has a transmission speed of 45 Gbps.The research of the T/R front-end is benefit for research and development of the 6G communication technology in China.