| The transitional metal dichalcogenides(TMDCs)with graphene layered structure has attracted widely attention due to its excellent optical and electrical properties.As a novel of TMDCs,ReSe2 features low lattice symmetry and interlayer decoupling.As an optical biaxial material,it has extremely anisotropic electrical and optical characteristics for linearly polarized light.This article aims to explore the optical and electrical properties of ReSe2 and focuses on the preparation of the thin layer of ReSe2 material,the characterization of its optical and electrical properties,and the characterization of the optical properties of the heterojunction.The main work is as follows:(1)Few-layer and thin layer ReSe2 were obtained by utilizing mechanically exfoliation from bulk crystal material to overcome the van der Waals interaction between layers.The thickness of the sample was characterized by atomic force microscopy and the optical contrast of the monolayer ReSe2 was determined by optical contrast technology.(2)Raman spectroscopy and photoluminescence spectra of ReSe2 materials with different layers were characterized at room temperature.It was observed that the ReSe2 photoluminescence peak occured red-shifted when it was changed from thin layer to bulk material.In addition,a weak photoluminescence peaks appeareed around 1020 nm,which may be due to the defect level or the exciton emission.(3)1L MoSe2-2L ReSe2 heterojunction was prepared by utilizing mechanically exfoliation and characterized by Raman spectroscopy and photoluminescence spectra.The heterojunction was identified as I-type structure.(4)A back-gate field-effect transistor is fabricated with a thin layer of ReSe2 as a channel material.The characteristics of its electrical transport are studied by testing its transfer curve and output curve,determining its semiconductor type,calculating its Ion/Ioff ratio and carrier mobility,and analyzing the reason. |
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