Study On The Fabrication And Properties Of NiO Thin Film With Wide-band GAP

NiO thin film is a new type of wide-band gap transparent semiconductor material.Due to the excellent optical,electrical and magnetic properties,it can be widely used in electrochromic devices,ultraviolet detectors and memory.Recently,more and more attention was attracted by domestic and foreign scholars.It was the key to investigate on the properties of NiO material and fabrication of high quality NiO thin film in order to fabricate NiO-based devices with high performance.This paper has carried out relevant work on the properties,the fabrication and stability of NiO thin films.Firstly,by building corresponding physical model and selecting appropriate parameters,the band,structure and optical properties of NiO thin film were simulated using materials studio software.Meanwhile,NiO films were fabricated on quartz substrate using RF-magnetron sputtering method.The properties of the as-grown NiO thin film and simulation result were compared,and these two results were well matched.The structure,optical,and electrical properties of NiO thin films grown under different sputtering power and gas ratio were studied by using modern testing technology,and some conclusion were given.At last study the stability of NiO thin film after long-term store were discussed.The electrical properties of NiO thin films especially in the neutral atmosphere,reducing atmosphere and oxidizing atmosphere were investigated,and the stability mechanism of electrical properties were shown.