Preparation And Semiconductor Properties Of Lead Doped Indium-Iodide Polycrystalline Thin Films

With the rapid development of science technology,nuclear technology has penetrated into various fields such as science and technology,military,environment,and economy,making nuclear radiation detectors a research focus.The high-performance nuclear radiation detector materials are the primary conditions for making highly sensitive detectors and the main factors affecting the detector performance.Therefore,the research on high-performance nuclear detector materials is the key to realize high-sensitivity room temperature nuclear detectors.Indium iodide is an excellent semiconductor material for nuclear radiation detectors.At present,the research on InI is mainly focused on the preparation of single crystals.It is difficult to obtain large-area,high-quality single crystal materials.However,a variety of semiconductor crystal materials have been prepared into thin films and excellent performance has been achieved,and it can be seen that thin film can solve the problem of single crystal growth.Therefore,based on the theory of thin film growth and doping modification,the effects of thickness and doping element concentration on the performance of indium iodide thin film were studied.Firstly,the development and application of semiconductor thin film materials and doped semiconductor thin film materials are described.The thin film formation process,the theory of thin film nucleation,the basic mode of thin film growth,and the preparation technology of semiconductor thin films are described in detail.Secondly,the process parameters such as temperature control and deposition rate during the preparation of thin films were explored.Various thicknesses of indium iodide polycrystalline thin films were prepared by vacuum evaporation and passed X-ray powder diffractometer,scanning electron microscope-X-ray energy dispersive spectrometer,and UV-visible spectrophotometer.The morphological structure and band gap of the polycrystalline film were characterized by instruments such as resistivity meter,and the effect of thickness on the polycrystalline indium iodide film was analyzed.Finally,the specific processes for the synthesis and purification of lead doped indiumiodide polycrystals with different concentrations were investigated by two-zone vapor phase transport method and horizontal zone fusion purification method.Various concentrations of lead doped indium iodide polycrystals thin films were prepared by vacuum evaporation method.The appearance components,lattice structure and band gap of the deposited lead-doped indium iodide polycrystalline thin films were analyzed by various test methods.