The Preparation Of Indium Selenide Thin Film And The Application Of Indium Selenide Thin Film Transistor

In 2010,Dr.Geim seized the Nobel Prize in Physics for his work on two-dimensional graphene crystals in 2004.This work made the 2D material research become very popular all over the world.However,due to the nature of the zero-band gap of graphene,its application in the field of microelectronic devices and optoelectronic devices is severely limited.Like graphene,indium selenide is a typical?-?layer of semiconductor materials.The bulk of indium selenide showed very good stability,high carrier mobility,and high optical absorption rate which has a very good application prospect in the field of microelectronics and optoelectronics devices.But so far,the preparation of indium selenide optoelectronic and microelectronic devices is mainly based on the nanoflakes which are monolayer or few layers obtained by mechanical exfoliation.Although the so prepared devices have very excellent performance.Because the material is mainly based on the mechanical exfoliation method,it must be strongly random and have very low efficiency productivity.So,it is very difficult to carry out large-scale production and application.In view of the fact that the microelectronic devices and optoelectronic devices of indium selenide are mainly based on the two-dimensional thin film obtained by the mechanical exfoliation method and cannot be scaled up and applied,this paper is devoted to the development of a large-area and uniform indium selenide thin film and the technical methods and recipe for rapidly depositing of indium selenide which has a good crystal structure and corresponding properties.But not for pursuing the ultimate performance of a device based on a single layer or few layers two-dimensional semiconductor material.In this paper,the growth of In₂Se₃ thin films by single-target magnetron sputtering was studied.The effects of sputtering power,sputtering pressure and annealing temperature on In₂Se₃ thin films were investigated.A recipe for depositing In₂Se₃ thin films at room temperature by single target magnetron sputtering and a suitable annealing process were obtained..In this paper,the process of preparing In₂Se₃ thin films by thermal evaporation was studied.In the following annealing process,In₂Se₃ thin films with different thickness and good crystal structure were obtained.The effects of annealing temperature on the properties of the films were investigated.In this paper,the physical vapor deposition method was used to deposit the In₂Se₃film in a tube furnace,and a field effect transistor with a bottom gate structure was fabricated using the deposited film.In this paper,the field effect transistor substrate of the bottom gate structure was fabricated by self-aligned lithography,and the transfer curve of the device was obtained by spin coating the organic semiconductor materials DNTT and C10-DNTT.