Fabrication Of Cu_xNi_y Thin Films By Magenetron Sputtering

CuxNiy films were deposited on single crystal MgO and Al2O3 substrates by DC magnetron sputtering with using Cu-Ni binary composited targets.The effects of substrate type,deposition temperature,deposition power,Ar pressure and types of targets on the film composition,film phase,out-of-plane and in-plane orientation,microstructure,and deposition rate were systematically investigated by X-ray diffraction(XRD),pole figure,filed emission scanning electron microscopy(FESEM),electron probe microanalysis(EPMA)and atomic force microscopy(AFM).In order to obtain the CuxNiy films with controlled components and varied compositions.The main research contents are as follows:Firstly,Cu films were deposited on single crystal MgO(111)and Al2O3(0001)substrates by altering the deposition conditions of deposition temperature(25-600 ℃),deposition power(50-100 W),and Ar pressure(1-3 Pa).XRD results show that the out-of-plane of the Cu films is only<111>-orientation on these two kinds of single crystal substrates,indicating that the Cu films are<111>preferred orientated epitaxial films.The microstructure and deposition rate of the Cu films also changed with the change of deposition parameters.The results of FESEM illustrate that the grain size of Cu films increases with increasing the temperature and deposition power,and decreases with increasing the Ar pressure.The deposition rate of Cu films decreases with increasing the deposition temperature(2.24-0.96 μm/h,2.18-0.72 μm/h),and increases with increasing the deposition power(2.24-4.79 μm/h,2.18-4.64 μm/h),and decreases with increasing the Ar pressure(2.24-0.92 μm/h,2.18-0.92 μm/h).The results of AFM show that the roughness of Cu films increase with increasing the deposition temperature.The epitaxial growth relationships between the Cu films and substrates were investigated by pole figure.The epitaxial growth relationship are as follows:Cu(111)[-110]//MgO(111)[11-2],Cu(111)[110]//Al2O3(0001)[10-10].Then CuxNiy films were also deposited on single crystal MgO(111)and Al2O3(0001)substrates by altering the deposition conditions of deposition temperature(25-600 ℃)and deposition power(50-100 W).The results of EPMA demonstrate that the concentration of Ni component in CuxNiy films under the same deposition conditions,with the increase of portion of Ni in composited targets,ranges from 1.69-15.49%,1.83-15.54%,respectively.The microstructure and deposition rate of the CuxNiy films also changed with the change of deposition parameters.The results of FESEM illustrate that the grain size and uniformity of CuxNiy films increase with increasing deposition power.The grain size also increases with increasing deposition temperature,but decreases the uniformity.The deposition rate of CuxNiy films was complexly effected by deposition conditions and composited methods.The deposition rate of CuxNiy films increases substantially with increasing deposition power,and the variation range of deposition rate is not vary large with the change of Ni portion in composited target.The relationships between the deposition temperature and composited methods and deposition rate are more complicated.The increased degree of the deposition rate of CuxNiy films prepared by 1/2-Ni/Cu composited target is larger(56%,55%)when the deposition temperature was 25 ℃.The decreased degree of the deposition rate of CuxNiy films prepared by 1/4-Ni/Cu composited target is larger(48%,43%)when the deposition temperature was 400 ℃.