Preparation And Detecting Elastic Modulus Of Nano-porous Oxidized Silica Film Based On Ultrasonic Atomic Force Microscope

With the high-density,high-speed of large-scale integration development,the size of device feature has been reduced to nano-size.This is inevitable for the insulating medium film,which own low dielectric constant(Measure the properties of the insulator to store electrical energy),to reduce the crosstalk between lines and power consumption.Nano-porous silicon oxide has a low dielectric constant,good thermal stability,high mechanical strength,dimensional stability and good IC process compatibility and so on.Therefore,nano-porous silicon oxide film is suitable for using in this process of microelectronics.The silicon oxide film is prepared from plasma enhanced chemical vapor deposition method by leading to oxygen,argon,adding a small amount of organic material,Forming a plasma in the way of Glow Discharge and depositing on the glass substrate surface.Then,heat treatment at a high temperature,the carbon-hydrogen bonds and other organic components of the silicon oxide film are removed,the silicon oxide film forms gaps to reduce dielectric constant.Meanwhile,this article was used Ultrasonic atomic force system(UAFM)to the elastic modulus of the silicon oxide film on non-destructive testing.The main research work as follows:(1)Different dielectric constants nano-porous silicon oxide film are prepared by changing monomer ratio and oxygen,deposition time,deposition power and other experimental conditions.Then the films are deal with annealing to prepare the low dielectric constant nano-porous silicon oxide film with K <1.9.(2)Test resonant frequency of cantilever beam reference sample,test sample by utilizing UAFM system,characteristic equation of cantilever beam contact stiffness model and MATLAB software to calculate the reference sample and the test sample contact stiffness.Finally,the elastic modulus of test sample is calculated by reference method.