Synthesis Of Graphene-Based Transparent Conducting Films By Remote Catalyzation Of Cu Nanoparticles

Graphene has exotic conductivity and high transmittance.As a promising transparent conducting films,graphene has more potential superiority than ITO and FTO.The chemical vapor deposition method(CVD)is expected to the most possible method for preparation of graphene in many methods.However,the CVD method usuallys uses copper,nickel or other metalassubstrates.A complex transfer process is needed to obtain the independent graphene sheets,which can inevitably introduce more defects in the graphene films.So it has became a trend that directly grow high quality graphene,especially grow on insulating substrates at lower temperature during these years.In this work,we directly deposit continuous and low-defect graphene on insulating substrates by remote catalyzation of Cu nanoparticles(NPs)using CVD method.In addition,we introduce SiO2 anti-reflective film between graphene and quartz substrate to further improve the transmittance of GE/quartz,while maintaining the high conductivity of graphene to prepare GE/SiO2 AR film/quartz composite films withhigh transparency and high conductivity.The main contents of this paper are as follows:(1)A novel method is proposed to directly grow low-defect and few-layer graphene on insulating substrates by remote catalyzation of Cu nanoparticles(NPs).The number of layer and quality of graphene can be controlled by adjusting the growth condition.Avoiding the complex transfer process and the film damage.This method can effectively improve the quality of the graphene,and decrease the growth temperature,which is beneficial to the application of graphene in the new energy field and microelectronic devices.(2)SiO2 nanoporous antireflective films(SiO2 NPs AR film)were prepared by sol-gel method,and the optimum technique parameters were chosen and determined through a series of experiments.The transmittance of SiO2 NPs AR film/glass increased 7.8 percent compared with single glass,and the transmittance of SiO2NPs AR film/quartz increased 5.7 percent compared with single quartz.Then we directly deposit continuous and low-defect graphene on SiO2 NPs AR film by remote catalyzation of Cu nanoparticles(NPs),to prepare GE/SiO2 NSs AR film/quartz composite transparent conducting films.The transmittance of composite transparent conducting films increased an average of 4.4 percent compared with GE/quartz.(3)SiO2 nanospheres antireflective array architecture(SiO2 NSs AR film)were prepared by sol-gel method and self-assembly technique,and the optimum technique parameters were chosen and determined.The transmittance of SiO2 NPs AR film/glass increased 8.1 percent compared with single glass,and the transmittance of SiO2 NPs AR film/quartz increased 5.8 percent compared with single quartz.Then we directly deposit continuous and low-defect graphene on SiO2 NSs AR film by remote catalyzation of Cu nanoparticles,to prepare GE/SiO2 NSs AR film/quartz composite transparent conducting films.The transmittance of composite transparent conducting films increased an average of 5.5 percent compared with GE/quartz.The insulating substrates with special structure are used as templates to fabricate special shapes of graphene,and graphene species of hollow nanospheres and tubes are obtained by the remote catalyzation of Cu NPs.This research of graphene transparent conducting films displays the great potential of CVD direct growth of graphene on other substrates with diferent structure to prepare graphene-based composites.