Preparation And Research On Photoelectric Performance Of Graphene Films By Catalysis Of Cu Nanoparticles With Controllable Distribution

Graphene is one of the most potential materials to substitute indium tin oxide(ITO)in the transparent conductive films(TCFs)due to its high conductivity,high transmittance and chemical stability.Recently,with the increasing demand for TCFs in optoelectronic devices,it becomes a research hotspot to directly deposit graphene with good photoelectric properties on insulating substrates,whereas the complicated transferring process should be avoided.In this study,we utilized Cu nanoparticles(NPs)as the catalyst to prepare graphene films on the insulating substrates via chemical vapor deposition method.Exploring the effects of Cu NPs distribution on graphene growth,we further studied the graphene growth process and realized the controlled growth of graphene.In order to improve the photoelectric properties of graphene transparent conductive films,we introduced Si O2 anti-reflection(AR)nanostructure between graphene and substrates.The main contents of this paper are as follows:(1)Graphene was prepared directly catalyzed by single-sided Cu NPs on insulating substrates,whose distribution was controlled by spin-coating method.To further study the growth progress of graphene and optimize the quality and photoelectrical performance,the effects on concentration and distribution of Cu(CH3COO)2,heat treatment temperature and methane flow were researched and analyzed respectively.The square resistance of the prepared graphene film is 1.835k?·sq^-1,and the transmittance is 88.22%.(2)From the macro level to the micro level,a mask was designed on the insulating substrate to control the distribution of Cu NPs to gain the patterned graphene directly.The effects of the distribution of Cu NPs on the quality and the patterning progress of graphene have been studied.The patterned graphene films could be directly controllably grown on the insulating substrate,avoiding complicated etching processes,and designed in combination with LED,which show good optoelectronic performance.(3)Based on the distribution control of Cu NPs,the anti-reflection nanostructure was introduced to fabricate high-performance graphene composite films.The introduction of Si O2 nanostructure,which can effectively reduce the reflection from the substrate,further improved the optical properties of the graphene anti-reflection composite films while maintained the good conductive properties of graphene.The square resistance of the prepared graphene anti-reflection composite film is 1.520k?·sq^-1,and the transmittance is 93.20%.In conclusion,in this paper graphene films with good photoelectric properties on the insulating substrate were prepared through the research into the effect on the distribution of Cu NPs,the introduction of anti-reflection nanostructure and the growth optimization parameters.The graphene films prepared by this method have great potential to apply to practical devices without transferring and etching complicate processes.