Research On Quantum Effect Of New Nanodevices And Its Application Circuit

Based on the non-equilibrium Green's function,the effects of different parameters on the electrical properties of molybdenum disulfide FETs are studied,and compared and applied in practical circuits.The main content is the following partsFirstly,The electrical properties of the traditional nin-type molybdenum disulfide FET were studied and compared with the existing FETs of different materials.It was found that the FET of the structure has a larger switching current ratio and lower.Leakage current,smaller subthreshold swing,and we discussed the influence of gate length,oxide dielectric constant and doping concentration on the electrical properties of the traditional nin-type molybdenum disulfide FET,and found that when changing simultaneously The gate length and doping concentration can obtain better device performance,which improves the reference for our actual circuit designSecondly,The electrical properties of the traditional p-i-n molybdenum disulfide FET were studied,and a new heterogeneous oxide structure was proposed.It was found that the HTFET structure has a larger switching current ratio and a smaller subthreshold swing.At the same time,we also studied the effect of the change of gate length on the performance of MoS2TFET.It is found that a larger gate length and the selection of a suitable gate voltage will greatly improve the subthreshold swing of the device.Finally,exploring the transport properties of spinFET based on NEGF has two cases,ferromagnetic parallel and anti-parallel configuration.Then,logic circuits based on spinFET has lower power and PDP compared with conventional MOSFETFinally,the molybdenum disulfide FET was studied.Finally,we studied the application of molybdenum disulfide FET in the circuit.First,we discussed the realization of the various logic functions of the molybdenum disulfide field effect,including:inverter,Adder,etc.Next,the effect of the doping concentration on the performance of the inverter was investigated.It was found that the device reduced the PDP by sacrificing the delay time as the doping concentration increased.At the same time,we also studied the effect of doping concentration on the performance of SRAM,and found that the anti-interference ability of the road increases with the increase of doping concentration.Finally,we studied the effect of heterogeneous oxide layer on the performance of the p-i-n-type MoS2 field-effect transistor construction logic circuit,and found that although the delay time is much increased,the power consumption and PDP are better than HTFET and FTE.