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Quality Improvement Research For ZX06 Series SOI Material In A Company

Posted on:2019-12-24Degree:MasterType:Thesis
Country:ChinaCandidate:Y LiFull Text:PDF
GTID:2381330605470755Subject:Industrial engineering
Abstract/Summary:PDF Full Text Request
Information technology in today's rapid development,the advantages of SOI material in mainstream information industry stand out,especially in the radiation resistance circuit,high temperature high pressure of microelectronic devices,low voltage/low power devices,optical communication and micro mechanical device,etc.Marked characteristics of SOI material is resistant to pressure,reduce the leakage current and junction capacitance,made by the chip data transmission speed,low consumption,high fever,greatly improve the performance of electronic devices,especially with the microelectronic chip the size of the narrowed,its use has gradually from the military,space and cutting-edge high-end products such as electric equipment to the electronics market.Due to the manufacturing of SOI technology difficult,high cost,low yield,long period of delivery,such as method to meet the needs of integrated circuit chip market,provides the high quality,low cost SOI is to break the monopoly by foreign long-term the goal.Based on A company ZX06 series thin film SOI chamfering process for the quality improvement process as the research object,the chamfering fragment rate is low,frequent fragment problem,seriously affected the delivery time and increase production cost.received A lot of customer complaints.In order to solve this problem,six sigma management method is proposed to analyze and improve the chamfering process of ZX06 series thin films SOI,so as to reduce the rate of breaking of ZX06 series thin films SOI in chamfering process.This paper discusses how to apply six sigma quality management DMAIC method,first gives to the ZX06 series thin film SOI chamfering process definition,define phase to set up project team,and then through the CTQ to identify the key quality characteristics,the critical customer requirements and the company internal processes to establish SIPOC diagram,and clearly ZX06 series thin film SOI chamfering process of input and output variables.In measuring the phase of the project,from ZX06 series thin film SOI chamfering process,then according to Plato's analysis to identify the scratch,which leads to collapse edge,was the cause ZX06 series is the main problem with thin film SOI chamfer broken point,using the fishbone diagram and brainstorming method from man,machine,material,hair,ring,the basis of an analysis of the test may lead to problems.In the analysis stage,FMEA was used to find 4 key factors that caused the risk of Y(RPN)greater than 90,and then the reasons for chip breakage were analyzed one by one through hypothesis experiment,and the improvement method was proposed.In the improvement phase of the project,key factors were improved according to the improvement plan,and a double ratio verification in Mintab15 quality software was adopted to confirm whether the improvement was effective.Finally,the project target was achieved,and the improvement of the chamfered fragment breaking rate of ZX06 series thin film SOI was successfully completed,so as to improve customer satisfaction and market competitiveness,and make the enterprise gain certain profits.
Keywords/Search Tags:Six sigma, DMAIC, SOI, Fragment rate, Quality improvement
PDF Full Text Request
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