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Preparation Of Lead-free Perovskite Materials And Performance Optimization Of Solar Cell Devices

Posted on:2021-03-13Degree:MasterType:Thesis
Country:ChinaCandidate:J B ZhangFull Text:PDF
GTID:2381330614963739Subject:Optical engineering
Abstract/Summary:PDF Full Text Request
The perovskite solar cell has been developed for nearly a decade,and the solar conversion efficiency has achieved 25.2%.Because of its low cost and simple preparation method,its commercial application has the potential to surpass the silicon-based solar cell.However,current high-efficiency perovskite solar cells contain metal Pb,and there is a risk of leakage.More and more researchers are devoted to the development of non-lead perovskite materials,among which Sn-based perovskite and Ge-based perovskite have theoretically excellent potential,and the solar energy conversion efficiency is also increasing year by year.At present,the efficiency of Sn-based perovskite has reached 13.24%.This paper mainly studies and optimizes the FA0.75MA0.25Sn I3perovskite battery device,and explores the preparation methods of pure inorganic lead-free broadband perovskite Cs Sn Br3 and Cs Ge I3.The specific research contents are as follows:?1?The FA0.75MA0.25Sn I3 perovskite thin film was prepared by a one-step method.By adjusting the concentration of Sn F2 additive and the concentration of the precursor solution to optimize the preparation process,the Sn F2 concentration was optimized to be 10 mol%compared to Sn I2,and the concentration of the precursor solution was optimized to 1 mol/L.By treating PEDOT:PSS substrate with 0.5 mol/L acetamide,the perovskite crystallinity was improved,carrier recombination was inhibited,and the carrier transmission efficiency between the interfaces was improved.The average efficiency of the 16 groups of devices was increased by 28%.The best device efficiency reaches 4%.?2?Sn powder is used to reduce the content of Sn4+ions in the precursor,so that cheap and low-purity Sn I2 can be used to prepare perovskite.The device efficiency is comparable to that of high-purity Sn I2.The optimal device efficiency is 3.10%.The studies have shown that the presence of excessive Sn4+will not only produce more defects,but also affect the normal combination of Sn2+and organic halides.The flocs formed by Sn4+and organic halides could hinder the transport of carriers,Adding Sn powder to the precursor can effectively reduce this kind of situation.?3?The preparation of Cs Sn Br3 perovskite films and powders with ethanol/ethylene glycol as a solvent has a greater degree of crystallinity than the films and powders prepared with DMF/DMSO as a solvent,and the perovskite is preferentially oriented to the?100?crystal plane.Moreover,the powder prepared by ethanol/ethylene glycol has better absorption performance.In addition,by optimizing the reaction conditions,the use of hypophosphorous acid to reduce Ge4+yielded high-purity Cs Ge I3 perovskite powder.
Keywords/Search Tags:Perovskite, Solar cell, Lead-free, Interface regulation
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