Experimental Study Of Double-layer Graphene On Raman Characterization Method And Stacking Effect

Graphene is known as the “king of materials” which has excellent mechanical,thermal and electricity properties.With the development of new technology such as flexible graphene electronic devices,graphene materials are widely used in electronic components.Double-layer graphene is superior to single-layer graphene in stability,reliability,and regulation of electrical properties.Therefore,the effective characterization and research on the strain state of the double-layer graphene/substrate material is the core foundation to promote the widely application of graphene.In this paper,the graphene prepared by chemical vapor deposition method(CVD)was investigated.Firstly,the Raman data processing optimization software based on MATLAB was programmed.Secondly,a method about Raman peak-splitting of double-layer graphene was proposed,and the tangential shear stress in two interfaces of double-layer graphene and PET substrate under uniaxial loading was studied.In the process of Raman experimental data processing,there is a large amount of data but the standardized and batched data processing tools are lacking.The purpose of the software is to realize the features,which can fit the data quickly,effectively and accurately.The fitting information of Raman data can be batch-output by this software,such as peak shift,peak intensity,full width at half maximum,and fitting image,which improves the processing efficiency of data.The tangential mechanical properties of the two interfaces were studied by Raman spectroscopy.Combing the mechanical analysis and peak intensity information,a new method of peak-splitting was proposed and programmed.The relationship between the two interfaces of the equal-length double-layer graphene was first studied by the method.The results showed that the interfacial strength of graphene was smaller than that of graphene and PET substrate.The double-layer graphene with different stacking modes was studied and the stress concentration at the boundary caused by stacking was quantitatively characterized.