Photoelectric Properties Of Two-dimensional Material MoS₂ Under The Control Of Indium Gate Electrode

Recent studies have shown that in addition to the composition and arrangement of atoms in materials,dimension also play a key role in determining their fundamental properties.This can be seen from the research on graphene in the past few years.Which shows that it has different optical and electrical properties from bulk materials,such as high electrical conductivity and thermal conductivity.With the rapid development of graphene and the increasingly mature methods for preparing ultra-thin layers,extensive research and exploration of two-dimensional materials?TM?have been initiated.Two-dimensional materials are characterized by high utilization rate of surface atom,easy regulation of energy band structure,and surface chemical modification,so they have important scientific research value and broad application prospects,among which the most representative is transition metal bi-sulphide?TMDS?.Graphene's various applications are interesting in nature and technology,but it is chemically inert and can only be activated by the functionalization of the required molecules,which can lead to a series of drawbacks.In contrast,the 2D TMDS show a wider range of chemical applications,providing opportunities for fundamental and technical research in the fields of electronics.At present,people in view of the two-dimensional material carrier of regulation to do a lot of work,and steamed plating electrode is one of the main way people realize carrier control,but this method preparation technology is complex,high cost,our work to try a simple transfer of indium electrode method to regulate less layers of MoS₂ carrier concentration,and through the electrical transport properties and Raman spectrum measurement,proved that the indium MoS₂ for ohmic contact electrode and a single layer.We prepared MoS₂ samples with different thickness by mechanical stripping method,and characterized the layers and morphology by atomic force microscope,Raman spectrum and optical microscope.After that,theindium electrode was configured with 1L,2L and 3LMoS₂ by a simple electrode transfer method,and the contact between the indium electrode and the 1LMoS₂ sample was verified to be oh-mic contact.Finally,we studied the indium under the gate electrode regulation 1L,2L,3LMoS₂ Raman spectral changes of a sample,the results show that with the increase of voltage,1L,2L,3LMoS₂ Raman peaks of the sample A1 g respectively moved towards the direction of the frequency decrease 1cm-1,1cm-1and0.5cm-1,and the peak position E2g1 basic remains the same,compared with light under the door control measurement of Raman spectra of both changes in basic consistent,that we through the way of transfer indium electrode can effectively realize the 1L,2L,3LMoS₂ sample carrier concentration control.