Effects Of Electron And Proton Irradiations On The Performance Of InGaAs Solar Cells With Different Structures

Space particle irradiation effects were studied for two different band gap single-junction InGaAs cells using the space environment integrated radiation simulation equipment in this paper.The changes of the electrical properties of InGaAs solar cell under the irradiation of 150 keV electrons,150 keV protons,and 150 keV electrons and protons were studied.The tests mainly involved in the research include I-V performance,quantum efficiency(EQE),dark I-V property,photoluminescence spectroscopy(PL),and X-ray diffraction(XRD).Based on the above test analysis,the degradation of the electrical properties of the InGaAs solar cell is summarized and the internal damage mechanism of the InGaAs cell is revealed.The results show that when 150 keV electrons are applied to InGaAs cells with band gaps of 1.0 e V and 1.1 e V,respectively,most of the electrons pass through the junction regions and base regions of the two cells,introducing a large number of defects inside the cell.These defects serve as the flow recombination center causes a decline in the electrical performance of the solar cell,and the Isc attenuation of the two bandgap InGaAs batteries is comparable,while the Voc decay of the InGaAs battery with a bandgap of 1.1 e V is much larger than the InGaAs attenuation of the bandgap 1.0 e V.The EQE decays continuously with the increase of the irradiation fluence,and the maximum attenuation of the EQE of the two band gaps is equivalent.The dark characteristic curve fitting results show that after the electron irradiation the two-gap cell parallel resistance Rsh decreases,while the series resistance Rs,the composite current Is2,the diffusion current Is1 increase,and the Rsh and Is2 of the bandgap 1.1 e V solar cell change more greatly.The 150 keV proton irradiation did not significantly affect the electrical performance of the InGaAs cell with a band gap of 1.0 e V,and the electrical performance did not decrease significantly with the increase of the fluence.The results of 150 keV proton irradiation of InGaAs cell with a bandgap of 1.1 e V show that the I-V curve decays with the increase of the irradiation fluence,Voc greatly decays,and Isc decays slightly.SRIM simulations show that most of the proton motion trajectory terminates near the junction region,and a large number of defects are introduced near the emitter region and the junction region,which reduces the carrier lifetime and results in a greater attenuation decrease in the short wavelength portion of the EQE.The dark current increases,and through the numerical simulation of the dark characteristic curve,the Rsh decreases as the irradiation fluence increases,Rs,Is1,and Is2 increase to a certain extent,and it is found that the change of the dark characteristic parameter can indirectly reflect the light characteristic parameters.Decline.The PL test showed that the peak intensity of the characteristic peak continuously declined with the increase of the irradiation fluence.XRD results show that the proton irradiation results in a certain reduction in the peak intensity of the InGaAs diffraction peak,and the half-peak width has a certain increase.After co-irradiation of electrons and protons,the electrical performance parameters of InGaAs cells with a bandgap of 1.1 e V all decline.Co-irradiation results in a decrease in EQE and an increase in dark current.Dislocation damage and the accumulation of a large number of defects destroy the integrity of the lattice,resulting in a decline in the PL peak intensity and a decrease in the peak height of the XRD diffraction peak.The attenuation of the photoelectric property caused by the co-irradiation is larger than that caused by the single-particle irradiation,but less than the sum of the attenuation of the performance caused by the single-electron and single-proton irradiation alone.