Simulation On Radiation Effects Of MOSFET And Inverter Chain Under Various Temperatures

With the urgent development of deep space exploration,more and more space devices are in extreme space environment in recent years.There are a large number of high-energy cosmic rays in space.The electronic devices working in space will be affected by radiation and produce a series of radiation effects,including total dose effect,displacement damage effect and single event effect.In the practical application of space,various temperature environment is an important space environment accompanied by radiation environment,and it is also an important factor affecting the reliability of components in orbit.Various temperature environment will affect the generation and compounding of radiation defects in devices,which makes radiation damage present different effects from that in normal temperature environment.Therefore,it is necessary to study the radiation effect of typical components in various temperature environment,so as to ensure the reliability of components in on-orbit service.In this paper,the electrical parameters of MOSFET and inverter chains under various temperature irradiation are simulated.The space extreme environments considered are various temperature single factor environment,radiation single factor environment and various temperature combined with radiation environment.Based on the above environment,the 3D models of MOSFET and inverter chains are constructed and verified.The simulation models of various temperature,radiation and various temperature radiation are built respectively,and the electrical parameters are simulated.The results show that the transfer characteristic curve of MOSFET shifts to the right,the threshold voltage increases and the carrier mobility increases at low temperature;the threshold voltage drifts and the leakage current increases under the influence of total dose effect;and the single event effect affects the charge collection in MOSFET caused by the transient current pulse of the drain pole.With the increase of LET value,the charge collection in the drain pole will increase.It multiplied.In the case of single event effect,the charge collection of the inverter chain is much larger than that of MOSFET due to its structure.When the device is under the interaction of temperature and radiation,low temperature conditions will improve the leakage characteristics of MOSFET,and the threshold voltage drift generated at low temperature will offset the threshold voltage drift caused by the total dose effect to a certain extent.