Wire Bonding Process Development And Process Control Of Optical-MOS Solid-State Relay

In order to realize President xi jinping's dream of a strong military,the state has increased funding for research on national defense military weapons and equipment year by year to accelerate the development of integrated,informationized,digitized and intelligent weapons and equipment.Military weapon equipment is composed of different functional modules,which are usually assembled from different types and specifications of components and various parts.In some military applications,optical-MOS solid-state relay is the most basic and key microelectronic device in function module.The optical-MOS solid state relay series developed by the company is to meet the requirements of miniaturization and lightweight of supporting devices for a certain type of military weapon equipment.Optical-MOS solid relay products are manufactured by microassembly technology,mainly including point adhesive sheet technology,gold wire bonding technology and parallel sealing welding technology.Gold wire bonding is the key technology in the microassembly manufacturing process of optical-MOS solid relay products.In this project,based on the actual needs of the company,the gold wire bonding technology,which is urgently needed in the production of light-mos solid relay products,is developed after consulting a large number of technical data related to microassembly.According to the company's existing process basis and equipment resources,the development of gold wire bonding process mainly includes the following contents: 1)according to the product structure characteristics and the size of bare chip welding disc to choose the appropriate type of wedge gauge.2)select the appropriate type and specification of the bonding wire according to the functional characteristics of the product.3)the operation principle of the bonding equipment and the specific contents controlled by each action and parameters of the equipment can be found out with the bonding ceramic substrate as the bonding carrier and the equipment description data.4)according to the size of bare chip bonding pad and the related requirements in gjb548b-2005 "test methods and procedures for microelectronic devices",the test verification of firing ball process parameters was conducted.The outer diameter of the golden ball after burning was tested with the Olympus smt-7 microscope,and the obtained test data was statistically analyzed.According to the analysis results,thetechnological parameters(burning current and burning time)of the burning ball were confirmed.5)the bonding process parameters,including bonding pressure,bonding power,bonding time and bonding temperature,were determined by using the gold-plated ceramic substrate as the bonding carrier through the bonding appearance appearance and the bond strength tensile curve distribution diagram.6)with the gold-plated ceramic substrate as the bonding carrier,the matching range of process parameters was optimized through the environmental stress test.7)on the basis of the optimized matching range of process parameters,the chip bonding was used as the carrier to determine the matching range of process parameters of the chip bonding through the bond strength tensile curve distribution diagram and environmental stress test.8)with chip bonding as the carrier,the optimum combination of chip bonding process parameters was determined by taguchi test method in Minitab software.9)verification of batch production of combination products with optimal chip bonding process parameters.The combination of bonding process parameters verified by process test was applied to the mass production of products,the statistical analysis of the quality of product verification batch assembly was made,the production experience of gold wire bonding process was summarized,and the process control requirements of gold wire bonding process were obtained.