Simulation Research On Single-Event-Effect Of HfO₂-based Ferroelectric Field Effect Transistor Memory Circuit

Ferroelectric random access memory（FRAM）that stores information with polarization characteristics has unique advantages in aerospace electronic devices because of advantages of high access speed,low power consumption,and strong radiation resistance.Ferroelectric Field Effect Transistor（Fe FET）is a memory cell of the transistor-type ferroelectric memory,which can achieve non-destructive reading,and has the advantages of simple structure and high integration.HfO₂ is widely used as a dielectric in CMOS devices and can overcome the common integration problems of ferroelectric materials due to its CMOS compatibility.HfO₂-based Fe FET can meet the development needs of high integration and stability of electronic devices.However,complex space radiation environment is still able to cause radiation effects in Fe FETs,which result in stored data errors or functional failures.With reduction of the node in a semiconductor process,single event effect（SEE）has been the main reason of abnormal work in microelectronic devices.What is more,HfO₂-based Fe FET memory is still in the experimental stage,and there is no HfO₂-based Fe FET chip on the market,so it is difficult to carry out its SEE experimental research.Therefore,the device-hybrid simulation is necessary and feasible for the study of the SEE of HfO₂-based Fe FET.In this thesis,simulation study is conducted on single-event-transient mechanism in HfO₂-based Fe FET memory circuit.The main work and results in this thesis include:（1）Construction of HfO₂-based Fe FET devices and read-write circuits for ferroelectric memory cells.According to the device parameters and experimental data of HfO₂-based Fe FET,a 45 nm Fe FET device model and it’s ferroelectric storage circuit were established using semiconductor simulation software Sentaurus TCAD.（2）Simulation of single-event transient（SET）response in HfO₂-based Fe FET.The charge collection and charge sharing effects of a single HfO₂-based Fe FET were simulated.The effective collection depths of N-Fe FET and P-Fe FET are 0.25～0.3 and0.2～0.25μm respectively.The drain and the PN junction of near drain are the most sensitive areas for SEE.The increases in the LET value and the angle incidence of the high-energy particles can aggravate the charge sharing effect.（3）Simulation of single-event-upset effect on the read-write circuit of HfO₂-based Fe FET memory cell.The influence of SET pulses in HfO₂-based Fe FET memory cell’s sensitive nodes of the peripheral sensitive amplifier were simulated,and the internal mechanism on the fluctuation of read and write data were analyzed.The results show that high-energy particles enter the drain of the HfO₂-based Fe FET memory cell in the read-write circuit.When the memory cell is in the"1"state,the output transient pulse voltage signal has a large fluctuation due to the charge injection of the source,and then return to the initial state after 0.5 ns.When high-energy particles enter the sensitive node of the amplifier,the data can be read normally without single-event-upset bacause the fluctuation time is only 0.4 ns.When two beams of high-energy particles with a time interval of 0.5 ns act on the drain of the ferroelectric memory cell,greater output data signal fluctuations produce than that caused by a single beam of high-energy particles.When two beams of high-energy particles enter the storage array node and the sensitive amplifier node respectively,the output voltage difference reduces,and the data flip up to 1.3 ns,causing data read and write errors.