Modeling Design And Analysis Of Silicon-based Spiral Inductor

With the rapid development of device integration and miniaturization,the research of single-chip RF integrated circuit and on-chip system is accelerated.At the same time,based on the RF and microwave circuit system,in some specific frequency band,the design of high-performance passive devices is deficient,especially the inductance on the single chip,which plays an extremely important role in improving the circuit performance.Due to the complexity of the structure design and the existence of various loss effects of the on-chip integrated inductors,how to build a high-precision and widely used innovative physical model of the on-chip inductors at the present stage of the rising working frequency band of the RF integrated circuits,and how to improve the quality factor and inductance value of the on-chip inductors at the same time,these two important performance parameters have always been difficult to achieve.Therefore,the research on this issue has very important practical value and far-reaching significance.In this paper,the modeling and analysis of the spiral inductor on silicon substrate are used to develop a fully parametric device structure model,which integrates the idea of suspension structure and gradual change structure.Finally,combined with the application research of the inductor on double-layer chip,the requirements of improving the quality factor and inductor value at the same time are achieved.In this paper,the loss mechanism and loss effect of silicon-based spiral inductor are analyzed in detail,several important performance parameters are introduced,and the influence of structure parameters and process parameters on the performance of silicon-based spiral inductor is studied respectively.The influence of the two factors,line width and coil spacing,on the performance of the inductor is mainly studied.The simulation data of inductor performance obtained in HFSS simulation software are compared,analyzed and optimized continuously,so as to obtain the working performance index of inductor which can meet the actual processing application.Finally,an innovative idea is put forward,that is,the upper coil can rotate at a certain angle to improve the quality factor of the inductor.The fabrication process of spiral inductor on silicon substrate is designed,and the structure of the fabrication process flow chart of the double-layer gradual inductor is optimized.The structure of the double-layer inductor is completed by two kinds of substrate structure bonding,and the photolithographic mask layout required in the fabrication process of the double-layer gradual inductor is designed.Finally,the wholeprocess of the double-layer gradient inductor is explained,and the preparation process of the double-layer gradient inductor is given.