Research And Design On Key Modules Of CMOS Millimeter-Wave Radar Transceivers

With the continuous development of the intelligent process in modern society,the driverless car has become a huge wave of change in the automotive industry,and automotive radar plays an important role in improving the stability and safety of driverless car.Millimeter-wave radar has become the key direction of automotive radar research and development due to its small size,high spatial resolution,strong penetration and anti-interference ability.At the same time,with the development of semiconductor manufacturing technology,the characteristic frequency and device performance of CMOS increase,which makes the design of low-cost and high-stability millimeter-wave automotive radar chip possible.This dissertation focuses on the research and design of the key circuit modules of millimeter-wave CMOS transceiver chip for short-range radar(24GHz)and long-range radar(77GHz)-power amplifier(PA)and low noise amplifier(LNA).This dissertation introduces the basic theory of millimeter-wave power amplifier firstly,including power amplifier design methods and performance indicators,and focuses on comparing several classic typology of CMOS power amplifier.Higher output power amplifier ensures the sufficient detection range of millimeter-wave automotive radar.In this paper,A K-band two-way PA and A E-band four-way PA are respectively designed by power combiner based on transformer,which simplifies the biased and matching network effectively,and ensures the high voltage swing and output power without breakdown problems.A K-band power amplifier using transformers with matching network and biasing taps is designed in GSMC 0.13μm CMOS,which effectively improves the PA performance,the simulation results at the operating frequency of 24.5GHz show the PA has saturated output power of 17.3dBm,gain of 27.5dB,power added efficiency(PAE)of 16.5%and output 1dB compression point at 12.5dBm.In TSMC 65nm CMOS,an E-band power amplifier with 1-stage cascode and 2-stage common source is designed,the PA use different neutralized capacitors and power combiner based on transformer for wider bandwidth and high output power,the simulation results at the operating frequency of 79GHz show the PA has saturated output power of 16.5dBm,gain of 20.2dB,PAE of 16.5%and output 1dB compression point at 12.7dBm.Then,for the millimeter-wave LNA,the operation principle including noise source,definition of noise,performance principle and classic typologies are discussed in this dissertation.In order to decrease the effect of the gain and noise performance of cascade amplifier at the higher frequency because of parasitic capacitance,a compensated inductor is introduced between common gate(CG)and common source(CS).Besides,a source negative feedback transmission line is exploited,which effectively reduces the contradiction between noise match and power match in the input port of LNA,improving the input return loss and noise figure obviously.Based on the above analysis and discussion,a K-band low noise amplifier is designed in GSMC 0.13μm CMOS,the simulation results at the operating frequency of 24.5GHz show the LNA has noise figure of 4.6dB,gain of 27dB,input 1dB compression point at-32.7dBm.An E-band low noise amplifier is designed in TSMC 65nm CMOS,the simulation results at the operating frequency of 79GHz show the LNA has noise figure of 7.1dB,gain of 22dB,input 1dB compression point at-23dBm.This dissertation makes a more comprehensive and summary of millimeter-wave power amplifier and low noise amplifier,designs a K-band single-end power amplifier,a K-band pseudo-difference power amplifier based on transformer and a K-band low noise amplifier in GSMC 0.13pm CMOS,designs an E-band 4-way power amplifier with high output power and an E-band low noise amplifier in TSMC 65nm CMOS.