Development of silicon nanowire field effect transistors |
Posted on:2012-07-04 | Degree:M.S | Type:Thesis |
University:University of North Texas | Candidate:Nukala, Prathyusha | Full Text:PDF |
GTID:2451390011455102 | Subject:Electrical engineering |
Abstract/Summary: | |
An economically reliable technique for the synthesis of silicon nanowire was developed using silicon chloride as source material. The 30-40 micron long nanowires were found to have diameters ranging from 40 -- 100 nm. An amorphous oxide shell covered the nanowires, post-growth. Raman spectroscopy confirmed the composition of the shell to be silicon-dioxide. Photoluminescence measurements of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell. Etching of the oxide shell was found to decrease the intensity of green emission. n-type doping of the silicon nanowires was achieved using antimony as the dopant. The maximum dopant concentration was achieved by post-growth diffusion. Intrinsic nanowire parameters were determined by implementation of the as-grown and antimony doped silicon nanowires in field effect transistor configuration. |
Keywords/Search Tags: | Silicon, Nanowire |
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