Research On Silicon-based High-speed Electro-optic Switch Based On Plasmon Dispersion Effect

High-speed and large-scale optical switching chips can be used as the core optical switching devices of large-scale optical switching networks.The optical switch is a device that controls the optical circuit switch and state switching in the network.The electro-optical switch has high response speed,low power consumption,and the silicon photonic device is small in size,compatible with the existing CMOS process,and can be mixed with integrated circuits..Therefore,silicon-based electro-optic switches have the potential to form large-scale integrated optical circuits,which can meet the growing demand for high-density integration.With the deepening of research in the field of integrated optical circuits,the application of optical switches in high-speed scenarios has received extensive attention.In order to improve the switching performance and achieve the goal of highspeed and high-integration electro-optic switching devices,in this paper,we use the plasmonic dispersion effect to design and fabricate the silicon-based high-speed electro-optic switch and optical switch array.Have:1.A MRR high-speed electro-optic switch based on carrier depletion effect in pn junction is designed.The active control of silicon-based photonic devices is realized by using the plasma dispersion effect,and the doping concentration and structure of the pn junction are designed to obtain the best performance;the working principle of the MRR electro-optic switch is introduced,and the micro-ring device is optimized by FDTD and other simulation algorithms The size of the device,the layout was drawn and taped out,and the device performance test was completed using the built test platform.The measured rise time of the switch was 11.75 ns,and the fall time was 48.76 ns.2.A MZI single-ended push-pull traveling wave electrode high-speed optical switch based on carrier depletion effect in pn junction is designed.The transmission line equation of the traveling wave electrode is deduced,the size parameters of the traveling wave electrode are designed and optimized by various methods,and its performance is simulated and verified.The simulation results show that the response time of the switch is about tens of ps.It is-25 d B and the device loss is 2.5 d B.This electro-optic switch utilizes pn junction modulation to obtain shorter switching response time,and utilizes a novel unbalanced push-pull traveling wave electrode design to improve modulation efficiency,shorten size,and reduce crosstalk.3.A dual MZ electro-optic switch and its multi-layer electro-optic switch array are designed.Compared with the conventional MZI electro-optic switch,the device can meet the requirement of crosstalk below-20 d B over the operating bandwidth of more than 100 nm,while maintaining the loss of about 2 d B.It suppresses port crosstalk,thus broadening the operating bandwidth of the device.The designed multi-layer electro-optic switch structure can form a strict non-blocking array of multi-layer switch arrays,the port switching mode is flexible,the overall size is reduced through the multi-layer structure,and the integration degree is improved.