The Interaction Of Highly Charged Ions With Two-dimensional Materials

In this thesis,the interaction between low energy,highly charged ions and two-dimensional materials is investigated experimentally.Energy loss and charge exchange measurements of ions penetrating two-dimensional materials and ion irradiation of two-dimensional were carried out:the charge state distribution and energy loss of the penetrating ions were measured using an electrostatic analyzer and the results of the ion irradiation experiments were observed using transmission electron microscopy.In the experiments where Ar¹⁵⁺ions with an energy of 45 keV penetrated multilayer graphene（five and ten layers）,analysis of the energy and charge state distribution of the penetrating ions showed that the charge exchange peaks between the ions and the graphene material appeared at the peaks of the+3 to+1 valence states of the emitted ions,accompanied by significant energy loss.The ion energy loss increased exponentially with the decrease of the emitted charge state.Under the irradiation of Xe³⁰⁺ions with an energy of 90 keV,there are no irradiation traces in single-layer and two-layer graphene,but irradiated amorphous regions appear in five-layer,six to eight-layer and ten-layer graphene.The amorphous regions are round in shape with an average diameter of about 50-100 nm,and there are raised folds at the junction of the amorphous and crystalline regions.Argon ions with the same charge state at different kinetic energies and argon ions with different charge states at the same kinetic energy irradiated ten layers of graphene,the average diameter of the amorphous regions increased with the kinetic energy of the incident ions,but no clear trend was found with the charge state of the incident ions.Irradiation of monolayer boron nitride with argon ions of different charge states at the same kinetic energy produced amorphous regions with an average diameter of 70-160 nm.The average diameter of amorphous regions increased with the kinetic energy of the incident ions.