| Transparent conductive thin films are widely used in solar cells,liquid crystal displays,gas-sensitive components and other fields because of their excellent optoelectronic properties.In this paper,Ti and Ga co-doped ZnO(TGZO)films were prepared on ordinary glass by sol-gel spin-coating method,and the doping amount,annealing temperature,annealing time and other parameters were varied.The crystal structure,grain size,internal stress,dislocation density,surface topography and optoelectronic properties of the TGZO pairs were characterised and analysed using an X-ray diffractometer(XRD,Ultima IV,Japan),a scanning electron microscope(SEM,JSM-7500F,Japan),an ultraviolet visible spectrophotometer(UV-2550,China),a four-probe tester(RST-9,China)and a Hallmeter(Accent HL-5500PC,England).It is shown that all TGZO films have a hexagonal fibrillated zincite structure and have excellent optoelectronic properties in the visible range,with an average transmittance of over85%in the visible region,resistivity of 10-3 orders of magnitude and carrier concentration of1019 orders of magnitude.The TGZO films prepared under the conditions of Ti doping of 1.0at.%,Ga doping of 1.0 at.%,annealing temperature of 500°C and annealing time of 2.0 h have the best optoelectronic properties,with a maximum average transmittance of 98.53%in the visible region,a minimum resistivity of 1.76×10-3?·cm,a maximum carrier concentration of2.45×1020 cm-3 and a maximum carrier mobility of 14.49 cm/V·s.It is worth noting that the optical band gap of all TGZO films is smaller than that of the pure ZnO film(3.37 e V),varying between 3.249 e V and 3.32 e V.In this paper,the effect of doping amount on the preparation of TGZO thin films was investigated,and the effect of doping amount on the internal stress,dislocation density,surface morphology and optoelectronic properties of the films was analysed.At 1.0 at.%Ti doping and1.0 at.%Ga doping,the films have a minimum internal stress and dislocation density of 0.131GPa and 1.357×10-3 nm-2,respectively,a maximum average visible light transmittance of98.53%,a minimum resistivity of 1.98×10-3?·cm and a maximum integrated photovoltaic performance factor of 1.046×10-4?-1.In this paper,the effect of annealing process on the preparation of TGZO films is discussed after setting the Ti doping and Ga doping at 1.0 at.%.At an annealing temperature of 500°C and annealing time of 2.0 h,the optimum optoelectronic properties were achieved,with a maximum transmittance of 97.87%in the visible region,a minimum resistivity of 1.76×10-3?·cm,an optimum overall optoelectronic performance factor of 1.099×10-4?-1,a maximum value of 2.135 for the c-axis merit orientation and a minimum stress value of-0.02199 GPa. |
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