Simulation And Experimental Study On The Electromagnetic Pulse Interference Effect Of Three-junction GaAs Solar Cell

Electromagnetic pulse has the characteristics of large energy,high frequency,wide range of action and short time.It is easily coupled into electronic systems and equipment through antennas,apertures or transmission lines,and induces a series of nonlinear effects in nonlinear semiconductor devices or systems,which cause temporary failure or permanent damage to the electronic system.It is precise because of the many feature of electromagnetic pulse,coupled with the transformation of modern warfare to electronic information warfare,that electromagnetic pulse weapons are highly valued by all countries.Up to now,a variety of electromagnetic pulse warheads with serious lethality for different electronic equipment or systems have been developed.Correspondingly,with the development of electromagnetic pulse weapons,the space electromagnetic environment has also been subjected to an increasingly severe trial.Various electronic equipment and systems with sensitive components as an important part are extremely susceptible to electromagnetic pulse interference or direct damage,and cannot work normally.As a new type of energy product,solar cells have gradually been widely used and studied in people’s daily life and scientific research due to their non-polluting,sustainable,and non-restricted characteristics.At the same time,as a semiconductor device,solar cells are responsible for converting light energy into electrical energy to ensure the normal on-orbit operation of spacecraft.They are extremely sensitive to electromagnetic radiation and have a very fragile anti-interference ability.When it is affected,performance degradation or direct damage leads to an insufficient power supply and serious damage to aerospace equipment.Therefore,it is of great significance to study its reliability in the electromagnetic pulse environment.In this paper,a combination of numerical simulation,theoretical analysis and experiment is used,taking high-efficiency three-junction GaAs solar cells as the research object,and the damage effect and mechanism of it under electromagnetic pulse are studied and analyzed.The main research content include the following two aspects:The semiconductor device and process simulation tool Sentaurus TCAD was used to establish a two-dimensional simulation model of the three-junction GaAs solar cell device,considering the mobility model,carrier generation-recombination model,optical model and other physical models,using the transfer matrix method Numerical calculation and analysis are carried out,and the output I-V characteristic of the steady state is verified.By injecting high-power microwave pulses into the cathode,the transient changes of the temperature and current density inside the device under pulse injection were studied,and the influence of the amplitude and pulse width of the high-power microwave pulses on the electromagnetic pulse effect was studied.The results show that in the negative half cycle of high-power microwaves,the positive bias of the PN junction and the too small area of the cathode lead to excessive current density under the cathode,which is the main reason for the increase in the peak temperature of the device.In addition,the larger the pulse amplitude,the faster the internal temperature of the device rises,and the shorter the time required to reach burnout.Finally,the power damage threshold of the solar cell device decreases with the increase of the pulse width,and the energy damage threshold increases with the increase of the pulse width.By designing specific test plans,using a transmission line pulse generator and a solar cell test system,a pulse current injection test was carried out with three-junction GaAs solar cells as the test sample.The damage threshold and damage law of solar cells under electromagnetic pulse injection with different parameters are obtained.The results show that the samples have the same damage threshold when other parameters are the same but the pulse voltage is different,and are not affected by the cumulative effect.The peak voltage of electromagnetic pulse is an important factor affecting the damage effect,and the greater the peak voltage,the more severe the damage.The smaller the pulse width of the electromagnetic pulse,the greater the damage threshold voltage.The damage caused to the solar cell sample after the peak voltage of the electromagnetic pulse reaches the threshold damage point is permanent.The electromagnetic pulse interference effect and mechanism study of triple junction GaAs solar cells,the damage threshold change rule,and the established electromagnetic pulse damage test method and test platform developed in this paper provide a certain theory and experimental basis for the mechanism research of solar cells under electromagnetic pulse environment.