| Nowadays,the amplifier and frequency divider in the radio frequency front end are designed mainly aiming for high speed,high integration,low power consumption and low cost.The major rexearch topics of this thesis include:1.An X-band low noise amplifier based on 0.18 μm SiGe BiCMOS technology was designed: Based on the noise principle of the radio frequency two-port network,the minimum noise figure impedance was extracted;the on-chip large Q inductor was designed to achieve low noise figure and a relative wide bandwidth.Finally,the corresponding layout was drawn,and measurements were conducted.The measured results of this chip meet the design specifications.2.A dual-band SIW filter-based power amplifier is designed: the input matching network of the dual-band power amplifier adopts a three-stage dual-band matching structure,and the dual-band output matching network of the power amplifier adopts a SIW dual-band filter.The input impedance is adjusted to the optimal load impedance of the power amplifier.Finally,the corresponding layout was drawn,and measurements were conducted.3.A broadband divide-by-two injection-locked frequency divider was based on 0.18 μm SiGe BiCMOS process: The application of the double-pole model of the differential structure in the ring injection locker was analyzed;the design of the broadband injection-locked frequency divider was completed.Finally,the corresponding layout was drawn,and measurements were conducted.The test result of this chip meets the design specifications.4.An 8/9 dual-mode prescaler was designed based on 0.18 μm SiGe BiCMOS technology:The operation principle of the CML latch structure was analyzed,and a D flip-flop was accordingly;the 4/5 dual-mode frequency divider,asynchronous frequency divider,and 8/9dual-mode prescaler were explored and designed.Finally,the corresponding layout was drawn,and measurements were conducted.The measurement results meet the design specifications. |
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