| With the rapid development of aerospace industry,more and more communication satellites have been applied commercially.As the core part of the transceiver of the satellite communication system,the RF PA used in aviation will be subjected to various space radiation in the spaceborne environment,which will have a great influence on the performance of the RF power amplifier.The exploration of terrestrial space encompasses large radiation fields from various sources.The terrestrial cosmic radiation striking the active circuit in a semiconductor device results performance degradation of the circuit.The wireless communication system still faces huge challenge of extreme environment in terrestrial space.There are several ways to reduce the effect of high-energy radiation,such as technology,packaging,schematic,layout,etc.However,it is still a challenge to conduct radiation hardening of wireless communication system.According to this situation,the design of radiation-hardened SOI RF PA is researched in this thesis.In this thesis,based on 130 nm SOI technology,a x-band high power RF PA is designed,using stacked transistor technology and power combining technology,to improve the output power.For the stacked PA,shunt capacitors are innovatively introduced,and the efficiency of stacked power amplifiers increase from 39% to 43.5%in principle.Finally,the design of the X-band power amplifier is completed,and the Psat of 29.3d Bm at the frequency of 10 GHz is realized in the simulation principle,and the PAE is 19% at this point.The chip was tested later and the problems were corrected.Under the framework of stacked PA,a novel radiation-hardened adaptive bias circuit is proposed,which can greatly improve the anti-irradiation capability of radio frequency stacked PA.The simulation results show that the PA without radiation-hardness has a gain degradation of 2d B,Psat decline of 2d B and PAE reduction by 10% in 300 krad（Si）radiation environment.By using the adaptive radiation-hardened bias circuit,the degradation of gain is less than 0.7d B,Psat remains constant,and the reduction of PAE is7%,when the radiation-hardened PA is irradiated up to 300 krad（Si）.Because the above PA at the expense of current,a scheme to adjust the grid capacitance with radiation is proposed in order to solve this problem,which also has great radiation-hardened capacity.In this thesis,the design of radiation-hardened SOI RF PA is researched.It provides some ideas and solutions for the radiation-hardened RF PA,and verifies the feasibility of the design in principle. |
