Study On Carrier Transport Characteristics Of Silicon Based PIN Detector Irradiated By 1064 Nm Continuous Laser

When the silicon-based PIN detector is irradiated by 1064 nm continuous laser,the carrier transport in the silicon-based PIN detector changes,which affects its photoelectric conversion characteristics.Therefore,the research on the action law and mechanism of carrier transport characteristics of silicon-based PIN detector irradiated by 1064 nm continuous laser is of great significance for the research and development of highperformance optoelectronic devices.In this paper,the carrier transport characteristics of silicon-based PIN detectors irradiated by 1064 nm continuous laser are studied theoretically,simulated and experimentally.The specific work is as follows:In the aspect of theoretical research,firstly,the carrier transport model of silicon-based PIN detector irradiated by 1064 nm continuous laser is established.In the part of carrier transport model,it includes carrier generation model,recombination model and migration model.Then,based on the principles of heat conduction,thermal radiation and thermal convection,the thermal model of silicon-based PIN detector irradiated by 1064 nm continuous laser is established.Finally,the output current model of silicon-based PIN detector irradiated by 1064 nm continuous laser is established by using current continuity equation,current density expression and electric field distribution.In the aspect of simulation research,the simulation model of carrier transport of siliconbased PIN detector irradiated by 1064 nm continuous laser is established on the basis of theoretical research.Through the establishment of the carrier simulation model,the variation of the band gap,intrinsic carrier concentration,carrier absorption coefficient and carrier mobility with temperature and the longitudinal impurity concentration distribution of the silicon-based PIN detector are obtained.Through the temperature simulation model of silicon-based PIN detector irradiated by 1064 nm continuous laser,the relationship between the peak temperature of laser action center on the surface of silicon-based PIN detector and laser power density and laser irradiation time is obtained.Through the simulation model of output current of silicon-based PIN detector irradiated by 1064 nm continuous laser,the relationship of output current with laser power density and irradiation time is obtained.In the aspect of experimental research,the temperature rise,output current and dark current are studied.The relationship between the peak temperature and output current of the laser action center on the surface of silicon-based PIN detector and the laser power density and laser irradiation time is obtained by on-line experiments,and the relationship between dark current and power density of silicon-based PIN detectors after irradiation is obtained by off-line experiments.Compared with the simulation and experimental results,it is verified that the theoretical model of output current and temperature rise is reasonable.The variation of carrier transport characteristics of silicon-based PIN detector with temperature and doping concentration is comprehensively analyzed,and the change of microscopic carrier transport is analyzed comprehensively and systematically through the change of macroscopic output current.It is pointed out that the change of carrier transport characteristics is mainly caused by the recombination of carriers in silicon-based PIN detector.