Study On Current Recovery Characteristics Of Silicon Based PIN Detector Irradiated By 1064 Nm CW Laser

The research of laser irradiation silicon based detector has been developed and improved into a new subject.With the development of laser technology and the continuous progress of social science,the application technology of laser irradiation silicon based PIN detector is increasing,which makes some emerging industries realize great changes.Silicon-based PIN detector is a kind of optoelectronic device.Due to its high sensitivity,fast response rate and small size,it is greatly convenient in its production and life applications,such as: Medical treatment,laser marking,silicon PIN detector will be damaged in different degrees when subjected to laser irradiation,electrical performance degradation,the function of the detector is reduced,the detection effect is greatly reduced,so the research on the current recovery characteristics of 1064 nm continuous laser irradiation silicon PIN detector has a very important role in improving the damage resistance of laser.Based on the thermal theory and the theory of heat conduction and elastoplastic mechanics,the thermal and thermal stress models of the silicon-based PIN detector irradiated by 1064 nm continuous laser were established.The current recovery time model of the silicon-based PIN detector irradiated by 1064 nm continuous laser was established based on the current density and carrier complex motion formula.Based on the theoretical model,the simulation of thermal stress and current recovery time of silicon-based PIN detector irradiated by 1064 nm continuous laser was carried out,and the effect law of temperature,thermal stress and current recovery time of silicon-based PIN detector irradiated by 1064 nm continuous laser under different power density,external voltage and action time was obtained.The experimental system of 1064 nm continuous laser irradiation of silicon-based PIN detector was established to measure the maximum temperature of laser operation point and output current recovery time of silicon-based PIN detector online,and the dark current,damage morphology and damage area of silicon-based PIN detector after laser irradiation were measured offline.The relationship between the maximum laser point temperature,output current recovery time,dark current,damage morphology and damage area on the surface of silicon-based PIN detector under different external voltage,power density and action time was measured experimentally,and the action law of the current recovery characteristics of silicon-based PIN detector irradiated by 1064 nm continuous laser was summarized.The mechanism of current recovery of silicon PIN detector irradiated by 1064 nm continuous laser is presented.