Study On The Multiplication Effect Of Silicon Based APD Detector Irradiated By 1064 Nm Continuous Laser

Silicon-based APD detector is a kind of optoelectronic device with high sensitivity,which is widely used in many laser countermeasure fields.Therefore,it is of great significance to study the multiplier effect of silicon-based APD detector irradiated by laser.In this paper,the temperature,output current,dark current,damage morphology,Cmure V curve,responsivity and multiplication factor of silicon-based APD detector irradiated by1064 nm continuous laser are studied theoretically,simulated and experimentally,and the effects of different laser parameters and external bias on the multiplication factor are analyzed.Theory: Through the theoretical analysis of the temperature,electrical parameters and multiplier parameters of silicon-based APD detector irradiated by 1064 nm continuous laser,the thermal model,electrical parameter model and multiplier effect parameter model of silicon-based APD detector irradiated by 1064 nm continuous laser are established.Simulation: Based on the theoretical research,the thermal model,electric field model,output current model,dark current model,responsivity model and multiplier factor model are simulated.The relations of peak temperature,output current and multiplier factor of siliconbased APD detector with laser power density are obtained by simulation,and the relationship of multiplication factor of silicon-based APD detector with laser action time and external bias voltage is obtained.The spectral response curve at 0 V and the relationship between dark current density and test bias voltage are simulated.Experiment: An experimental platform was built,and the temperature,output current,dark current,damage morphology,Cmure V curve,responsivity and multiplier factor of APD detector irradiated by 1064 nm continuous laser with laser power density,action time and external bias voltage were obtained.firstly,based on the analysis of the variation law of Cmurl V curve,different external bias voltage was obtained.The relationship between the doping concentration of silicon-based APD detector and the axial depth,combined with the influence of external bias voltage on the multiplication factor of silicon-based APD detector irradiated by 1064 nm continuous laser,it is concluded that with the increase of external bias voltage,the Joule heat caused by the barrier and current density in the multiplier region of silicon-based APD detector increases,and the influence degree of multiplier factor increases with the increase of thermal damage in the multiplier region.As a result,the multiplier effect of Si-based APD detector decreases with the increase of external bias voltage.By comparing it with the simulation results,it is verified that the multiplication effect parameter model of silicon-based APD detector irradiated by 1064 nm continuous laser is reasonable.