Simulation And Experimental Study On Surface Mophology Of Single Crystal Si Cutting By Fixed Diamond Abrasive Wire Saw

The cutting of the single crystal Si wafers often uses a fixed diamond wire saw cutting technique.However,the cutting efficiency is low and the surface/subsurface damage of the wafer is severe,and the cutting marks left on the surface of the wafer are too obvious,which may affect the surface topography of the processed wafer and quality.Therefore,it is very important to study the cutting process of hard and brittle materials and obtain good surface quality.At present,the research on the surface morphology of diamond wire saws after cutting Si single crystals is mainly on the study of subsurface damage and the use of neural networks.Roughness prediction,through the basic research on the system,process parameters,material properties,etc.,the simulation of the surface morphology of Si single wafer after wire saw cutting is blank in the current field.This thesis simulates the surface topography for industrial processing.The single crystal Si wafer provides a theoretical basis.In this thesis,the principle of wafer surface formation after consolidating diamond abrasive wire saw to cut single crystal Si is analyzed,and the total thickness deviation(TTV)which affects the surface morphology and surface roughness of single crystal Si wafer is analyzed,and the variation with processing parameters is ruled.In order to simulate the surface topography,the BBD test and the response surface analysis method show that the feed rate of the workpiece is larger,and the surface roughness is larger,and the surface roughness decreases with the increase of the wire saw speed.A one-dimensional low-pass digital filter was designed to calculate the surface roughness of the Si single wafer.According to the theory of critical depth of cut of Si single crystal,a single diamond abrasive grain cutting single crystal Si model was established,and the surface morphology of single abrasive grain single crystal Si was simulated.Using the calculation relationship between the workpiece feeding speed,the wire sawing speed and the groove corrugation depth and the groove corrugation width during the machining process,the kinematics model is established and the GUI interface is used to simulate the trajectory of the abrasive grain on the wire saw to simulate the workpiece.The surface waviness profile and the resulting simulation results can effectively predict the variation of surface waviness with processing parameters.Pearson correlation analysis between cutting force and depth of cut was carried out.The cutting force-cutting depth model of the fixed silicon wire sawing single crystal Si was established.The simulation process was optimized by combining the kinematics simulation model to obtain the processing parameters and surface corrugation depth and ripple width.The relationship and comparison of the simulation results through experiments.The wear and fracture of the wire saw and the main cause of the fracture during the cutting process were analyzed.The stress cycle analysis of the wire saw was carried out to obtain the corresponding relationship between the surface roughness and the three stages of wire saw wear.