| Because of its unique and stable physical and semiconductor properties,silicon carbide materials have revolutionized the integrated circuit industry.Silicon carbide electronic technology is developing from the research stage to commercial production,so the large size of silicon carbide is an inevitable development trend.The production process from crystal growth to silicon carbide is a long process.Among them,cutting is the most important and critical process for processing silicon carbide single wafers,accounting for more than 50% of the entire silicon wafer processing cost.The impact of various factors on the processing quality after the processing size of silicon carbide is increased.In order to make the cutting quality of large-sized silicon carbide cutting blades better and reduce subsequent costs,it is important to study the cutting technology of silicon carbide under the development trend of large-size silicon carbide.significance.Currently,the multi-line reciprocating swing cutting method is most widely used as a wafer cutting process,but research on the cutting method is lacking.This article analyzes the material removal rate and material removal volume per unit length of new wire during the reciprocating cutting process of multi-wire swing.A constant new wire material removal volume cutting process is proposed,and the workpiece under the constant new wire material removal volume process is theoretically derived.The relationship between the feed speed and the feed speed of the new wire as a function of the cutting position;and the effects of the wire consumption and cutting efficiency on the quality of the silicon carbide cutting blade and the wire saw wear in the constant unit length new wire material removal volume process model were explored.The main work of the paper is summarized as follows:1.Theoretically analyzed the maximum contact length,material removal rate and material removal volume per unit length of new wire during a single rocking cycle,and analyzed the effect of process parameters on material removal rate and material removal volume per unit length of new wire.2.A constant volume length new wire material removal volume cutting process is proposed,and the functional relationship between the workpiece feed speed,the new wire feed speed and the cutting position is theoretically deduced,which provides support for process planning.3.The verification test found that the material removal volume of the new unit material with a constant unit length has a greatly reduced bending degree compared with the ordinary process cutting blade.Constant unit length new wire material removal volume process cutting efficiency increases during the cutting process The curvature of the cutting blade decreases,and as the wire consumption increases during the cutting process,the warpage of the surface accuracy of the silicon carbide cutting blade varies Of reduction.4.The local micro-morphology at different positions of the silicon carbide cutting sheet is related to the cutting process.The wavelength in the local three-dimensional topography is mainly related to the workpiece feed speed in the cutting process;the peak data will affect the roughness of different cutting positions.Among them,changing the wire consumption in the constant unit length new wire material removal volume process model can obtain better uniformity of cutting quality,and the improvement of cutting efficiency will reduce the uniformity of the surface quality of the cutting sheet.5.The difference of the wire saw wear amount reflects that the constant wire length new wire material removal volume process model can well control the wire saw wear uniformity during the processing process to obtain a cutting blade with better processing quality uniformity.;With the increase of the total cutting wire consumption,the wear of the wire saw enters the stable wear stage,which makes the difference in the cumulative amount of wear of the single abrasive particle exposure height smaller. |
PDF Full Text Request