| GaAs photoconductive semiconductor switches(GaAs PCSS)are widely used in many fields such as national defense and civil industry because of their excellent triggering jitter and fast conduction speed.Since the external circuit connected to the photoconductive semiconductor switch will have a great effect on its output characteristics,studying the external energy storage mode is also an important way to improve the switching performance.Therefore,this paper uses two different external energy storage devices,represented by 22pF capacitor and 10cm coaxial cable respectively,to study the output characteristics of photoconductive semiconductor switches under different energy storage modes,and studied the two different energy storage devices influences.At the same time,in order to obtain high power output,it can be obtained by parallel PCSS,which requires high synchronization of all PCSS.Therefore,this paper also studies the parallel synchronization of two-way switch based on microstrip line energy storage.This paper mainly carried out the following work:(1)The output characteristics of GaAs PCSS were studied based on the energy storage mode of 22pF capacitor and 10cm coaxial cable.When GaAs PCSS works in linear mode,the pulse width of the output pulse of the switch is less affected by the difference of the external energy storage devices,and more depends on the width of the trigger light pulse,the carrier lifetime and the bandwidth limitation of the attenuator and the transmission line used in the experiment.(2)When the GaAs PCSS works in linear mode and the LD is used as the trigger source,the pulse amplitude of the output electrical pulse based on the 22pF capacitor storage switch is higher than the output amplitude based on the energy storage of the 10cm coaxial cable.(3)Research on parallel synchronization of two-way switch based on microstrip line energy storage.The two-way switch has the best synchronism when the bias voltage is 134.76ps.And the synchronization precision and jitter time of the two-way switch are analyzed with the bias electric field.The reason why the jitter time increases first and then decreases with the bias electric field is the negative differential mobility effect of the GaAs material,the threshold electric field of the negative differential transfer effect of the switch is 5.5 kV/cm. |