| The EBCMOS detector is the most advanced vacuum-solid hybrid photoelectric imaging device.It has the advantages of high sensitivity,low power consumption,small size and digital output.It is very suitable for miniaturized low-illumination photoelectric imaging systems.Therefore,this topic focuses on the imaging mechanism of EBCMOS detectors to carry out research on portable low-light night vision systems.This paper first briefly introduces the development of low-light night vision technology.Secondly,the hardware platform of the portable low-light night vision system is developed,including the design of miniaturized metal structure and hardware circuit board.The hardware circuit board includes four parts:image acquisition board,core processing board,OLED display board and high-voltage output board.When fully considering the requirements of portable and low power consumption,the stacked structure is used to connect the various parts.In addition,the logic design of the imaging system is carried out with the Artix-7 series FPGA of Xilinx as the main control chip,which mainly includes the signal acquisition module,the cache module,the image display module and the high-voltage control module.1024@60fps,and at the same time,the bombardment voltage can be adjusted through the digital/analog conversion chip.Finally,a low-illumination image processing algorithm is designed to improve the image quality,which mainly includes:switching the detector between photosensitive CMOS and electron bombardment working modes through an adaptive brightness adjustment algorithm,and suppressing the dark current caused by the single-point correction algorithm The fixed pattern noise is filtered out by the spatial domain denoising algorithm combined with the neighborhood average method and Gaussian filter,and the random noise in the image is filtered out by the edge enhancement algorithm based on the fusion of Sobel operator and Laplacian operator.Detail components are highlighted.The final experimental results show that the system can change the exposure time and bombardment voltage of the detector chip in real time according to different environmental illumination,and finally realize real-time imaging in the illumination range of 2.9×10-4lx~666lx. |