Research On Electronic Sensitivity Characteristics Of EBCMOS

Continuous innovation in the fields of materials science,optics,and computer science has accelerated the development and breakthrough of low-light night vision technology.The low-light image sensor has evolved from the initial vacuum devices to the vacuum and solid hybrid device.Electron bombardment type complementary metal oxide semiconductor(EBCMOS)is a hybrid device that has attracted a lot of attention in the domestic low-light night vision field,and some research institutions have made significant achievements in the research of this device.However,the theoretical model of the device is not perfect,and the process preparation has not been reported in detail,and the test platform for gain measurement needs optimization.To address these issues,this paper systematically carried out research related to improving the theoretical model of EBCMOS devices,thinning the back-illuminated CMOS chips,and testing the gain of the devices.The research work is as follows:In the theoretical model research of EBCMOS,the electron-sensitive imaging theoretical model of EBCMOS was established based on the physical theories of the laws and behaviors of low-energy electrons in solids.A simulation study was conducted to investigate the impact of illumination on the signal-to-noise ratio,the number of incident electrons and electron current density of the device.The influence of the incident electron energy and the thickness of the passive layer on the charge collection efficiency of the EBCMOS device was also studied.The conclusion was that increasing the incident electron energy and reducing the thickness of the passive layer can help to improve the charge collection efficiency of the device.Based on the research on the thinning process of EBCMOS,various methods for thinning silicon wafers,such as mechanical grinding and chemical corrosion,were compared in terms of their advantages and disadvantages.After careful consideration,the chemical wet etching method was chosen as the most suitable approach to thin the passive layer of CMOS chips.Consequently,a new method for thinning the passive layer of chips with glass packaging was proposed.This method ensures that the thinning treatment does not affect the imaging function of the chips,providing valuable insights for the process preparation of EBCMOS devices.In the gain test research of EBCMOS,the CMOS image sensor area array camera was directly selected as the image information acquisition and transmission module of EBCMOS,resulting in a more integrated,smaller,real-time,and editable test platform.Secondly,the influence of electric field anode structure and electric field voltage on the electronic image gain of the device was studied.By comparing the gray value of electronic images formed by different anode structures and anode voltages,it was found that the anode structure in the thinning area of the hollow ring contact chip and the gray value of electronic images with higher electric field voltage were higher.Moreover,the influence of electric field voltage on electronic image gain was consistent with the theoretical simulation results obtained previously.This paper presents a study of the electronic sensitivity characteristics of EBCMOS devices,which were investigated through theoretical simulations and experimental testing.The imaging theoretical model of the device was improved,and the factors that affect the electronic gain performance and their changing patterns were explored through a combination of theoretical analysis and practical experiments.These findings provide valuable theoretical guidance and experimental references for the future preparation of EBCMOS devices.