Study On Radiation Effects Of GaInp/GaAs Double Junction Solar Cells

With the increasingdemand for spacecraft space missions,spacecraft energy consumption is also increasing,so space solar cells need to have higher photoelectric conversion efficiency and longer life.At present,the widely used space solar cells are lattice-matched three-junctionGaAs solar cells,but their photoelectric conversion efficiency cannot be further improved at present,so it is necessary to absorb a wider spectrum by using more numbers of cells,thereby obtaining higher Photoelectric conversion efficiency.GaInP/GaAs//InGaAsP/InGaAs four-junction bonded solar cells have high conversion efficiency and are expected to replace the existing threejunction cells as the main source of space power.When the solar cell operates in a complex space environment,the highenergy charged particles interact with the battery material to reduce the carrier lifetime,Thereby reducing the conversion efficiency of solar cells,resulting in a shortened working time of the spacecraft in orbit.And the premise of radiation-resistant reinforcement is to fully understand the radiation effect and damage mechanism of the device.The research on the radiation effect of solar cells in space has a vital significance for improving the life of the aircraft and extending the service life.However,research on the radiation effects of four-junction solar cells,especially four-junction bonded solar cells,is still in its infancy.Therefore,the research on the radiation effect of four-junction bonded solar cells is of great significance.Since the fourjunction bonding solar cell is composed of multi-component compounds of different compositions,the radiation damage effect and mechanism research are very complicated,so it is necessary to decompose the problem of the radiation effect of the four-junction bonding solar cell.In this paper,the radiation effects ofGaInP/GaAs double junction solar cells and their subcells,which constitute a four-junction bonding cell,are studied,which provides a basis for the establishment of an equivalent method for four-junction bonded solar cells.The results show that the degradation of GaInP/GaAs double junction battery under 1MeV electron irradiation is mainly caused by the displacement damage generated by the GaAs subcell base region.The thickness of the GaAs subcell base region can be reduced,which can effectively improve GaInP/GaAs.Radiation resistance of GaAs double junction batteries.Under different energy proton irradiation conditions,the degradation of GaInP/GaAs double junction solar cells and their subcells is closely related to the damage degree of the emitter,junction and base regions of the battery,and the battery base region has a greater influence on the radiation effect of the battery.Annealing at 220 degrees Celsius is the most obvious.With the extension of annealing time,the electrical parameters of solar cells have a certain degree of recovery,and the recovery of maximum output power is most obvious.The thermal annealing recovery of GaAs subcells is faster,mainly because the radiant thermal annealing activation energy of GaAs subcells is relatively low.In summary,based on the sub-battery of four-junction bonded battery,this paper analyzes the degradation law and damage mechanism of the battery under different particle irradiation.It is expected to provide basic research basis for the research on the radiation effect of the four-junction bonding battery.