| This work is completed based on the 2×1.7 MV tandem accelerator system in Wuhan University. It mainly introduces four aspects as follow:1. The article briefly introduces the history of the accelerator and the development of the accelerator technology at home and abroad. I also review the principle and application of ion beam analysis such as Rutherford Backscattering Spectrometry (RBS) analysis, Elastic Recoil Detection (ERD) analysis, Nuclear Reaction Analysis (NRA) and Particle-Induced X-ray Emission (PIXE).2. We expand the function of source of negative ion by Cesium sputtering(SNICS) and extract various negative ions such as H-, Li-, B-, C-, Si-, P-, Fe-, Cu-, Au- etc and cluster ion beam such as C1-C10, F1-F8, Si1-Si8, B1-B6 etc. Two aspects of work was finished base on the ion source of 2×1.7 MV tandem accelerator.1) We design a small target chamber and assemble it between the ion source and the accelerator tube and assemble a deceleration electrode. Negative cluster ion beam extracted from the ion source was deposited on the Si substrate for ultrathin carbon film preparation. The carbon clusters(C1-C2) current is 1 nA-50 μA. The 0.2 μA C2 was used for deposition of nano-structure carbon films on SiO2/Si substrate.2) A new design of multi position target frame was arranged on the original location of the Faraday cup, as the implantation chamber. Simultaneously, we design a set of electric scanner, which is mounted in the analyzing magnet interface flange. Negative cluster ions(C1-C8) was injected into the Ni (50 nm)/SiO2/Si substrates, followed by vacuum annealing at 700℃-1000℃. Because of the low solubility of C in Ni, the C precipitate from the surface of Ni and form graphene. After the optimization of the parameters of cluster size, implant dose and annealing condition, we got mono-layer graphene with the C4 cluster at implant energy of 20 keV and implant dose of 12×1015cm-2 when the cooling rate is 20℃/min. The results show that the layer of graphene and its quality are closely related to the implant dose and heat treatment process.3. We reconstructed the control system of the RBS/C chamber with Lab view program, and automatic scanning of channel spectrum test is realized. Ion beam analysis line of the 1.7 MV tandem accelerator system was established, enabling RBS, ERD, NRA, and channeling measurements. The system has been tested by performing qualitative and quantitative analysis of Ni/Si, BiFeO3:La/Si, samples of Ti implanted into SiO2 and Fe implanted into InP crystal. We studied the process and method of SIMNRA for spectrum analysis, and explored the method of using Qbasic, and finally the advantages and disadvantages of the two kinds of spectrum analysis softwares were compared.4. Measuring of light elements by ion beam analysis was performed. The light element of B, C and N in MoC/Mo/Si, TiBN/Si and TiBCN films were measured by non Rutherford backscattering spectrometry (non-RBS). And we optimized the structure of RBS-ERD chamber, in which an annular track was installed as the bracket of detector, convenient for accurate regulation of detection angle in ERD test. The implanted H in Si and H in steel welding joint were detected by ERD with 2.97 MeV C2+. The He implanted in Si with different energy and dose were detected by ERD with 2.95 MeV C2+. All the results of elastic recoil detection analysis is not ideal, its possible reason were the energy of incident ion, geometry parameters in the chamber, the thickness of the adsorbing film and other relevant factors. |
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