Experimental Research Of Single Event Effects On New Semiconductor By Pulsed Laser

Single event effects(SEE)threats on electronics components and space systems are one of the main questions confront to satellites.As new applications of semiconductors come to nanometer process,as well as deadline requests need timely tests and hard assurance need plentiful heavy ion SEE tests,as nanometer process semiconductors brings lots of novel process,such as SOI,Fin FET,and also Si C,Ga N,Si Ge semiconductor materials etc.SEE threats are one of the main reasons caused spacecrafts faults and failures,which should be conqured for space level semiconductors.Indeed,our space level semiconductors proceeded slowly for there are no plentiful testing methodologies.Radiation hardened chips manufacturing need Chip Design-Taping Out-Testing-Optimizing Design procedure,this need plenty SEE testings around the circle.SEE tests require innovative complementary radiation testing methodologies,such as the pulsed laser.Pulsed laser can give sufficient and convenient testing for electronics components and space systems SEE hardness assurance.New materials bring new theory challeges and methodologies for pulsed laser testing.Quantitive correlations between pulsed laser and heavy ion are distinct from each semiconductor,exiting pulsed laser SEE methods and theories are not good enough to be used in SOI process and Ga N process,Si C process,which called wide band gap semiconductor.For SOI process,by establishing the effective engergy methods reaching to chip active layer,quantitive correlations between laser effective energy and heavy ion LET are founded.By optimizing pulsed laser testing methodologies will pave the way for generating new common standards since the existing ones are mainly restricted to submicron Si semiconductors.To get universal relations for sub-nanometer Si/SOI process,between pulsed laser and heavy ion means comprehensive heavy ion testing to establish the pulsed laser testing equivalent theory,establishing a new radiation hardness evaluation for nanometer Si/SOI semiconductors,solving the buried oxygen layer attenuation and laser spot factor,which standardizing the full system level pulsed laser test from backside and frontside.For the Ga N proces and 3C,4H,6H type Si C process,with solving parameters related to the effective energy,Ga N process establish frontside pulsed laser method for single photon absorption and two photon absorption for the relationship between effective energy and LET;3C,4H,6H type Si C establish frontside and backside pulsed laser method for single photon absorption and two photon absorption for the relationship between effective energy and LET.In order to test the effectiveness of the equiavlence LET of pulsed laser for SOI process.Two spcecified designed 130 nm SOI DFF\28nm SOI DFF are tested by backside laser method,The effectivieness of buried oxygen layer has been considered for 130 nm DFF,and the 130 nm DFF including 11 items DFF,These DFF have different channel lengths,grid widths,drain gaps,DICE structural hardend designs which are key parameters to SEE harden chips design.When testing micro-nano SOI proces,.As to the 28 nm SOI DFF,laser spot crosswise effect should be completely considered,and error has been considered.The other 130 nm SOI DFF has not enough metallic layers is tested by frontside and laser equivalent LET is compared to heavy ion.Wavelengths and focus depth which can be used to test Ga N/Si C have been given according to material paramters for they should be tested by two photon absorption.By two photon absorption single event transient(SET)and single event burnt-out(SEB)has been triggered,laser energy and working voltage effects on the single event transient range and single event burnt-out sensitive areas.By frontside laser testing the reflactances,the effective energies caused SEB have got,which have same results with heavy ion.Pulsed laser equivalence LET has been verified.As for the timely SEE testing needs,for SOI process and wide band gap(Ga N,Si C)space level semiconductors design,equivalence between pulsed laser and heavy ion testing methods has been founded and quantitive correlations between each other are also established.As for the SOI process,frontside and backside laser one photon absorption equivalence LET with heavy ion has established,the effectivenss of buried oxygen layer and laser spot diameter has been verified;For Ga N process,frontside laser one/two photon absorption equivalence LET with heavy ion has been established;For Si C process,frontside and backside laser one/two photon absorption equivalence laser energy LET with heavy ion has been established.