Simulation Of Laser-induced Single Event Effect In Semiconductor Devices

Satellites operating in orbit face the threat of various rays in the space environment,including of heavy ions,neutrons,and high-energy protons,which can trigger single event effects（SEEs）in semiconductor components,causing logic errors and even burnout of components,directly threatening satellite safety.Since the 1980 s,people on the ground using ion irradiation to reproduce the SEE,to study the mechanism of the SEE,and to improve aerospace components for the anti-SEE purpose.With the development of laser technology,people can also use laser simulation experiments to find the circuit and sensitive areas that are prone to SEE,and then evaluate the reinforcement or protection performance of the device.In this paper,based on the thermal spike model of the pulsed laser-induced SEE process,a physical model of the charge excitation process was established via the absorption of pulsed laser injection energy by semiconductor materials,the distribution of electron temperature,and electron density of states was calculated,and the relationship between laser energy and the total amount of excited charge was obtained;By simulating the charge collection process,the differences of the SEE process induced by particles and lasers are analyzed,including the spatial and temporal distribution of the injected energy,the time scale of the charge excitation and collection process,and the interaction;The value of the electron-lattice coupling coefficient in silicon materials should be less than 3.7×109 W/（cm3·K）which was determined by considering the relationship between laser energy and total excitation charge as well as the experimental data.Therefore,the effects of laser energy,device doping concentration and initial temperature on the total amount of excitation charge were calculated.The devicerelated criteria of temperature and power for laser-induced SEE are given,and SEU cannot occur either the electronic temperature of the material is lower than 850 K during laser irradiation nor the inadequate laser power;The equivalent conversion curve between the linear energy transfer（LET）of heavy ions and the pulse laser energy for SEE is established by selecting the total amount of charge excitation as the intermediate amount.Two-electron resonance absorption model is proposed to explain the charge excitation process of laser-induced SEU.The model points out that when the singlephoton energy is lower than the bandgap of silicon,the valence band electron in the material can be excited to the conduction band by absorbing energy from the incident photon,and the energy of the conduction band high-energy state electron de-excitation.The two-electron resonance absorption model points out the positive correlation between the absorption coefficient and the free charge density,which is also proved in the simulation.