Laser crystallization of gallium arsenide thin films

Experimental investigations of phase transformation scenarios and the resulting microstructures and texture of crystallization of amorphous GaAs films on SiO2 induced by excimer laser are presented. The variation of grain size as a function of the incident energy density reveals three crystallization regimes: (i) the partial-melting regime; (ii) the complete melting regime; and (iii) the near-complete melting regime, which produces large-grained polycrystalline film.;The effects of laser-energy density and film thickness on the texture evolution during laser irradiation of the film by single and multiple pulses are also investigated. Increased laser energy density was found to strengthen structure. Grain growth appears to be driven by strain energy.;Theoretical investigation of micro-scale heat transfer and explosive crystallization in GaAs thin films are also submitted.