Preparation Of Al₂O₃ Thin Films And Studies On Its TL Properties

Aluminum oxide thin films are widely used in Optical, mechanical and micro-electronics fields because of their excellent properties, in term of physical and chemical interness , mechanical strength, hardness, good transparency, high abrasive and corrosion resistance, as well as insulting and optical properities. This paper outlines the Preparation and application of Aluminum oxide thin films, using different methods prepared aluminum oxide thin films successfully, discussed the crystallization parameters of preparation on the performance of films, surface and thermal properties of luminescence. Finally focus on the Polycrystalline Aluminum oxide thin films as a Radiation Protection dosimetry.This paper presents several aspects of work: prepared the amorphous Aluminum oxide thin films by magnetron response sputtering, discussed the parameters of the process of the formation of the film; prepared Polycrystalline Aluminum oxide thin films of the different structure successfully by using aluminum oxide annealing, discussed the impact on the structure and surface temperature of polycrystalline Aluminum oxide thin films ; prepared Aluminum oxide thin films by using the sol-gel method, annealing it under the same heat treatment system as the former group, compared the different films which prepared by different methods on its morphology and structure properties ;in conjunction with the internal Research of radiation dosimetry, reviewed Polycrystalline Aluminum oxide thin films as a Radiation Protection dosimetry materials; reviewing Polycrystalline Aluminum oxide thin films as TSEED is my work prospects .Through experiments and analysis of the film structure ,morphology and IR absorption properties, and so on, I did summarized below. Aluminum oxide thin films which prepared by response Magnetron sputtering is amorphous according to the X-ray spectra; its'micro-structure is the granular surface, the surface is uniform basicly, the size of particle is about 1μm; polycrystalline Aluminum oxide thin films prepared by annealing process of Aluminum thin films successfully, the crystallization of polycrystalline films generated depended on its heat treatment, the good TL effect of films can be found through the test technology, so it can be used as a TLD. Aluminum oxide thin films prepared by sol-gel method under the the same annealing conditions as the films which prepared by response Magnetron sputtering, it is discovered that the films which prepared by sol-gel method have relatively weak effect on crystallization and TL.