Influence Of Interface On Properties Of PZT Ferroelectric Thin Film

Due to their high dielectric constant (10²¹0⁶) and special performance, in recent decades, much effort has been made on the studies of ABO₃ series perovskite structure ferroelectric materials, such as Pb(Zr_xTi_1-x)O₃ (PZT) ferroelectric thin films, with regard to their applications in nonvolatile random access memories (NVRAM), infrared detectors, optical waveguide devices, pyroelectric imaging sensors, microactators and micro-electro- mechanical systems (MEMS).For the case of multilayer thin films, atoms may react to and interdiffuse at the interfaces at low temperature even room temperature. Nevertheless, the problem that the interdiffusion between ferroelectric thin films and substrate, as well as theill-crystalization of interface, which results in the decreasing of the ferroelectricproperties, remain to be solved.The aim of this thesis is to fabricate PZT ferroelectric thin films on Si substrates (three kinds of Si substrate, p type Si(111) for short p-Si, n type Si(111) for shortn-Si, porous Si(111) for short PS-Si) via RF magnetron sputtering and study theinfluence of interface on properties of PZT ferroelectric thin film. The main contentsand results of this work include:(1) The preparation of LNO bottom electrodesLaNiO₃ (LNO) thin film, as bottom electrode, was deposited on p-Si substrate at different substrate temperature, then was annealed via different temperature. Their microstructure are investigated using X-ray diffraction(XRD), the results show that LNO thin films deposited at room temperature and annealed of 500℃/30mins and 550℃/30mins present perovskite structure (100)-, (110)-, (111)-, (200)-polycrystalline orientation, and Ni₃Si (111) diffraction peak was observed which indicates the diffusion of Ni atoms into Si substrate. The intensity of Ni₃Si (111) peak decrease while that of LNO (200) peak increase with the increase of substrate temperature.(2) The preparation of PZT ferroelectric thin filmPZT ferroelectric thin film was deposited on LNO/p-Si substrate. Their microstructure are investigated using X-ray diffraction(XRD), the result show that...