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Preparation Au/SiO2 Composite Nanoparticle Films And SiO2 Nanowires

Posted on:2009-11-23Degree:MasterType:Thesis
Country:ChinaCandidate:Q X ZhangFull Text:PDF
GTID:2121360242994569Subject:Microelectronics and Solid State Electronics
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In the last decades, composite materials based on metal nanoparticles in/on oxide matrices have drawn a worldwide attention thanks to their intriguing chemicophysical properties that can be widely diversified as a function of particle size, shape, and mutual interactions. In particular the progressive increase of surface-to-volume ratio at lower cluster dimensions and the resulting quantum size effects emphasize the role of the electronic structure in determining the metal-metal and metal-oxide interactions, which, in turn, strongly influence the functional propertics. Oxide-supported metal nanoclusters represent intriguing candidates for several advanced applications, featuring heterogeneous catalysis, gas sensing, and magnetic and electronic materials. Among the various metal-oxide nanocomposites, silica-based materials containing metal nanoclusters have been widely investigated for the development of integrated-optical devices with controllable nonlinear properties, whose third-order susceptibility x is strongly enhanced near the surface plasmon resonance(SPR) frequency. Silica (SiO2), which is the important component in glass, Si-based microelectronic derives and optical fibers, is an increasingly important candidate to form 1D nano-materials. At present, the investigate of filmy Au/SiO2 composite materials is rarely at home and abroad, so it has a bigness investigate fild.Au/SiO2 composite nanoparticle films were prepared by magnetron sputtering in this paper. Among the various synthetic approaches, sputtering is one of the most feasible thanks to its inherent versatility and the capability of obtaining a homogeneous surface coverage under controlled processing conditions and at low temperatures. Other key advantages over other preparation routes are the possibility of controlling the metal content up to high concentration. In addition, we formed template to prepare one-dimensional by self-assembly, SiO2 nanowires was achieved, The growth of nanowires were governed by VLS growth mechanism.1. We have prepared Au/SiO2 composite nanoparticle films by magnetron sputtering. The microstructure and the surface morphology of Au/SiO2 composite films annealed at different temperatures were investigated using scanning electron microscope (SEM) and x-ray diffraction (XRD). Find best condition of growth.2. Experiment results indicate that Au nanodots of about 70 nm in diameter well-distributed in space are formed by self-assembly at the annealing temperature of 1000℃. Semiconductor materials with self-organized quantum dot structure play a very important role in photoelectronic and microelectronic field. It is a good candidate for the high quality photoelectronic and microelectronic devices, such as fiber optical communication lasers, photoelectronic detectors, high electron mobility transistors and electro-optic modulators. Among the kinds of method to fabricate the semiconductor quantum dots, self-organized processes is the one of most efficiency methods and attracted significant interest. The studies of growth and physical property of self-organized quantum dots has become one of hot topic in reduced dimensionality physical system. The Au nanodots are formed by self-assembly can be used as the template to prepare one-dimensional nanomaterials.3. The SiO2 nanowires have a clean surface with diameters of around 100nm and lengths of about 4 microns. The growth mechanism is discussed briefly. The growth of nanowires were governed by VLS growth mechanism.
Keywords/Search Tags:Au/SiO2, composite nanoparticle film, self-assembly, SiO2 nanowire
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