Preparation And Study On The Properties Of CoAg Nanowire

CoAg arrays with different sharps and structures were prepared by direct current electrodeposition and alternating current electrodeposition. Using the direct current method, the growth mechanism and current-time curve of the Co/Ag nanowires were discussed. The hysteresis loops in the different voltage 1.2V,1.4V,1.6V,1.8V,2.0V were characterized and analysed in the direct current electrodeposition. The different parts of Co/Ag nanowires were characterized by scanning electron microscopy (SEM). The remanence ratio and coercivity change with the different voltage but not in direct ratio. The best depositing voltage is 1.2v by experimentation. X-ray diffraction (XRD) patterns of Co/Ag nanowires clearly showed that they presented (100) crystal face Co,(111)(202)(311)(222) crystal face Ag and the alloy of hexagonal (202) Co/Ag. By the annealing, the remanence ratio and coercivity are increasing correspondingly.Using the alternating current method, the falling voltage process is an impotant tache in the template preparation. It is helpful to depositing nanowires. The microstructures and chemical composition of CoAg nanowires were characterized by scanning electron microscopy (SEM). The hysteresis loops in the different voltage 12V,14V,16V,18V,20V were characterized and analysed in the alternating current electrodeposition by vibrating sample magnetometer (VSM). The hysteresis loops show that all of the nanowires exhibited magnetic anisotropy with the easy axis along the nanowires. The best depositing voltage and frequency are 18V/200Hz.XRD patterns of CoAg nanowires clearly showed that they presented (101) crystal face Co,(100) crystal face Ag and tetragonal (312)CoAg alloy.