Preparation Of Semiconductor Pigments With Low Infrared Emissivity And Study On Its Application In Camouflage Paints

With the development of the infrared detective technology, the infrared camouflage technology has been quickly developed. Researchers have great difficultly in the developing of camouflage paints with low infrared emissivity. Pigment is the main component of the camouflage paints, which has great effect on infrared emissivity of camouflage coatings, so the study of pigment with low infrared emissivity is of great significance to the camouflage technology.ATO and CdXZn1-XS semiconductor pigment precursors were synthesized by co-precipition method. The influences of reaction temperature, pH of the solution, dripping speed and heat preservation time on the synthesis of precursors were studied and the optimal reaction conditions were obtained. The results showed that reaction temperature and pH of the solution were the main influence factors on the synthesis of precurors, while dripping speed and heat preservation time had little influence to the synthesis of precursors. The reaction conditions were dependable after the repetition of experiments.Semiconductor pigments were obtained by sinter experiments. The influences of sintering temperature, adulterate concentration and sinter persisting time on the optical characteristics of the coatings were studied and the optimal experiment conditions were obtained. The results showed that sinter temperature and concentration content were the main influence factors on the infrared emissivity of coatings, while sinter persisting time has little influence to the infrared emissivity of coatings. Semiconductor pigment coatings with low infrared emissivity could be obtained by modulating experiment conditions. The color of the pigment could be changed by modulating sintering temperature and adulterate concentration, which was avail to prepare the spectrum reflectance of the coatings.In order to investigate the appilication of semiconductor pigments in camouflage paints, a series of camouflage paints with different pigment component were prepared, optical characteristics of the camouflage coatings were studied to discuss whether these pigments could be used in the camouflage paints. The experiment results implied that infrared emissivity of the camouflage coatings could be effectively decreased by increasing the component of semiconductor pigments. The infrared emissivity of camouflage coatings on aluminium base could be depressed to 0.658, when the pigments were component of CdXZn1-XS 3.2g, ATO 0.8g and green pigment 1g. It is lower by 0.107 than the traditional green camouflage paint, and the reflectance could meet the need of US MIL spectrum channels in the near infrared waveband which required a reflectance of no less than 42%. The results demonstrated that semiconductor pigment could be effectively applied in the camouflage paints.